Study of gold and bismuth electrical contacts to a MoS$_{2}$ monolayer
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866910782183178240 |
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| author | Zielińska, Agata Prażmowska-Czajka, Joanna Dyksik, Mateusz Eroms, Jonathan Weiss, Dieter Paszkiewicz, Regina Ciorga, Mariusz |
| author_facet | Zielińska, Agata Prażmowska-Czajka, Joanna Dyksik, Mateusz Eroms, Jonathan Weiss, Dieter Paszkiewicz, Regina Ciorga, Mariusz |
| contents | Semiconducting transition metal dichalcogenides (TMDCs) present new possibilities for designing novel electronic devices. An efficient contacting scheme is required to take advantage of exceptional opto-electronic properties of TMDCs in future electronic devices. This is however challenging for TMDCs, mostly due to the typically high Schottky barrier formed between a metal and a semiconductor. Here we investigate different approaches for contacting MoS$_{2}$, utilizing both metallic gold and semimetallic bismuth as contact materials. The collected I-V characteristics of Bi-contacted devices are compared with the performance of traditional gold contacts. The method of AFM ironing, which we used to enhance the parameters of gold contacts, is also described. Additionally, we show preliminary results regarding an optical response for both types of samples. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_07444 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Study of gold and bismuth electrical contacts to a MoS$_{2}$ monolayer Zielińska, Agata Prażmowska-Czajka, Joanna Dyksik, Mateusz Eroms, Jonathan Weiss, Dieter Paszkiewicz, Regina Ciorga, Mariusz Mesoscale and Nanoscale Physics Materials Science Semiconducting transition metal dichalcogenides (TMDCs) present new possibilities for designing novel electronic devices. An efficient contacting scheme is required to take advantage of exceptional opto-electronic properties of TMDCs in future electronic devices. This is however challenging for TMDCs, mostly due to the typically high Schottky barrier formed between a metal and a semiconductor. Here we investigate different approaches for contacting MoS$_{2}$, utilizing both metallic gold and semimetallic bismuth as contact materials. The collected I-V characteristics of Bi-contacted devices are compared with the performance of traditional gold contacts. The method of AFM ironing, which we used to enhance the parameters of gold contacts, is also described. Additionally, we show preliminary results regarding an optical response for both types of samples. |
| title | Study of gold and bismuth electrical contacts to a MoS$_{2}$ monolayer |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2501.07444 |