Quantum anomalous Hall effect for metrology

Fuente: arXiv
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Autores principales: Huáng, Nathaniel J., Boland, Jessica L., Fijalkowski, Kajetan M., Gould, Charles, Hesjedal, Thorsten, Kazakova, Olga, Kumar, Susmit, Scherer, Hansjörg
Formato: Preprint
Publicado: 2025
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author Huáng, Nathaniel J.
Boland, Jessica L.
Fijalkowski, Kajetan M.
Gould, Charles
Hesjedal, Thorsten
Kazakova, Olga
Kumar, Susmit
Scherer, Hansjörg
author_facet Huáng, Nathaniel J.
Boland, Jessica L.
Fijalkowski, Kajetan M.
Gould, Charles
Hesjedal, Thorsten
Kazakova, Olga
Kumar, Susmit
Scherer, Hansjörg
contents The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges -- among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path towards an QAHE resistance standard realized in magnetically doped (Bi,Sb)$_2$Te$_3$ systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges as well as modern strategies to overcome them.
format Preprint
id arxiv_https___arxiv_org_abs_2501_07712
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Quantum anomalous Hall effect for metrology
Huáng, Nathaniel J.
Boland, Jessica L.
Fijalkowski, Kajetan M.
Gould, Charles
Hesjedal, Thorsten
Kazakova, Olga
Kumar, Susmit
Scherer, Hansjörg
Mesoscale and Nanoscale Physics
Materials Science
Quantum Physics
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges -- among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path towards an QAHE resistance standard realized in magnetically doped (Bi,Sb)$_2$Te$_3$ systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges as well as modern strategies to overcome them.
title Quantum anomalous Hall effect for metrology
topic Mesoscale and Nanoscale Physics
Materials Science
Quantum Physics
url https://arxiv.org/abs/2501.07712