Ferroelectric Properties of van der Waals Chalcogenides: DFT perspective

Fuente: arXiv
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Autori principali: Li, Xue, McHugh, James G., Falko, Vladimir I.
Natura: Preprint
Pubblicazione: 2025
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author Li, Xue
McHugh, James G.
Falko, Vladimir I.
author_facet Li, Xue
McHugh, James G.
Falko, Vladimir I.
contents Layered materials with non-centrosymmetric stacking order are attracting increasing interest due to the presence of ferroelectric polarization, which is dictated by weak interlayer hybridization of atomic orbitals. Here, we use density functional theory modelling to systematically build a library of van der Waals chalcogenides that exhibit substantial ferroelectric polarization. For the most promising materials, we also analyse the pressure dependence of the ferroelectric effect and charge accumulation of photo-induced electrons and holes at surfaces and internal twin boundaries in thin films of such materials.
format Preprint
id arxiv_https___arxiv_org_abs_2501_08194
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Ferroelectric Properties of van der Waals Chalcogenides: DFT perspective
Li, Xue
McHugh, James G.
Falko, Vladimir I.
Mesoscale and Nanoscale Physics
Materials Science
Layered materials with non-centrosymmetric stacking order are attracting increasing interest due to the presence of ferroelectric polarization, which is dictated by weak interlayer hybridization of atomic orbitals. Here, we use density functional theory modelling to systematically build a library of van der Waals chalcogenides that exhibit substantial ferroelectric polarization. For the most promising materials, we also analyse the pressure dependence of the ferroelectric effect and charge accumulation of photo-induced electrons and holes at surfaces and internal twin boundaries in thin films of such materials.
title Ferroelectric Properties of van der Waals Chalcogenides: DFT perspective
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2501.08194