Nanoscale structure formation in nickel-aluminum alloys synthesized far from equilibrium

Fuente: arXiv
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Hauptverfasser: Chen, Zhehao, Fellman, Aslak J J, Mulewska, Katarzyna, Mizohata, Kenichiro, Gambino, Davide, Ge, Yanling, Lu, Eryang, Djurabekova, Flyura, Delimitis, Andreas, Kurpaska, Lukasz, Sarakinos, Kostas, Tuomisto, Filip
Format: Preprint
Veröffentlicht: 2025
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author Chen, Zhehao
Fellman, Aslak J J
Mulewska, Katarzyna
Mizohata, Kenichiro
Gambino, Davide
Ge, Yanling
Lu, Eryang
Djurabekova, Flyura
Delimitis, Andreas
Kurpaska, Lukasz
Sarakinos, Kostas
Tuomisto, Filip
author_facet Chen, Zhehao
Fellman, Aslak J J
Mulewska, Katarzyna
Mizohata, Kenichiro
Gambino, Davide
Ge, Yanling
Lu, Eryang
Djurabekova, Flyura
Delimitis, Andreas
Kurpaska, Lukasz
Sarakinos, Kostas
Tuomisto, Filip
contents The present study reports on the structure formation in thin epitaxial nickel-aluminum films (Ni1-xAlx; Al atomic fraction x up to x=0.24) grown on MgO(001) substrates by magnetron sputtering. Experimental and computational data demonstrate that for x<0.11, the films exhibit the face-centered cubic random solid-solution Ni1-xAlx structure (γ). Whereas in the range x=0.11-0.24 the phase coexists with the ordered L12 structure (γ' phase). The two phases are homogenously intermixed forming a coherent and strained nano-solution, which exhibits a single lattice parameter that expands as the Al content increases. Isothermal annealing of films containing x=0.14 of Al, coupled with structural and nano-mechanical characterization, reveal that the nano-solution retains its overall integrity for temperatures up to 673 K, while the film hardness increases from 5.5 GPa (as deposited films) to 6 GPa. Further increase of the annealing temperature to 873 K and 1073 K causes the nano-solution to dissolve into distinct γ and γ' phase domains and the hardness to decrease down to values of 4 GPa. These findings confirm the metastable nature of the as-deposited thin Ni1-xAlx alloy films and underpin the effectiveness of high supersaturation/undercooling for creating non-equilibrium phases and self-organized nanostructures upon synthesis of multicomponent materials.
format Preprint
id arxiv_https___arxiv_org_abs_2501_08530
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Nanoscale structure formation in nickel-aluminum alloys synthesized far from equilibrium
Chen, Zhehao
Fellman, Aslak J J
Mulewska, Katarzyna
Mizohata, Kenichiro
Gambino, Davide
Ge, Yanling
Lu, Eryang
Djurabekova, Flyura
Delimitis, Andreas
Kurpaska, Lukasz
Sarakinos, Kostas
Tuomisto, Filip
Materials Science
The present study reports on the structure formation in thin epitaxial nickel-aluminum films (Ni1-xAlx; Al atomic fraction x up to x=0.24) grown on MgO(001) substrates by magnetron sputtering. Experimental and computational data demonstrate that for x<0.11, the films exhibit the face-centered cubic random solid-solution Ni1-xAlx structure (γ). Whereas in the range x=0.11-0.24 the phase coexists with the ordered L12 structure (γ' phase). The two phases are homogenously intermixed forming a coherent and strained nano-solution, which exhibits a single lattice parameter that expands as the Al content increases. Isothermal annealing of films containing x=0.14 of Al, coupled with structural and nano-mechanical characterization, reveal that the nano-solution retains its overall integrity for temperatures up to 673 K, while the film hardness increases from 5.5 GPa (as deposited films) to 6 GPa. Further increase of the annealing temperature to 873 K and 1073 K causes the nano-solution to dissolve into distinct γ and γ' phase domains and the hardness to decrease down to values of 4 GPa. These findings confirm the metastable nature of the as-deposited thin Ni1-xAlx alloy films and underpin the effectiveness of high supersaturation/undercooling for creating non-equilibrium phases and self-organized nanostructures upon synthesis of multicomponent materials.
title Nanoscale structure formation in nickel-aluminum alloys synthesized far from equilibrium
topic Materials Science
url https://arxiv.org/abs/2501.08530