Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions
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2025
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| author | Zhu, Wenkai Wen, Hui Zhu, Shouguo Cui, Qirui Xie, Shihong Ye, Meng Zhang, Gaojie Wu, Hao Zhang, Xiaomin Li, Weihao Huang, Yuqing Zhang, Jing Zhao, Lixia Patanè, Amalia Chang, Haixin Wang, Lin-Wang Wang, Kaiyou |
| author_facet | Zhu, Wenkai Wen, Hui Zhu, Shouguo Cui, Qirui Xie, Shihong Ye, Meng Zhang, Gaojie Wu, Hao Zhang, Xiaomin Li, Weihao Huang, Yuqing Zhang, Jing Zhao, Lixia Patanè, Amalia Chang, Haixin Wang, Lin-Wang Wang, Kaiyou |
| contents | Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and their high-quality interfaces. In the all-vdW magnetic tunnel junction (MTJ) devices, both the magnitude and sign of the TMR can be tuned by an applied voltage. Typically, as the bias voltage increases, first the amplitude of the TMR decreases, then the sign of the TMR reverses and/or oscillates. Here, we report on an unconventional bias-dependent TMR in the all-vdW Fe3GaTe2/GaSe/Fe3GaTe2 MTJs, where the TMR first increases, then decreases, and finally undergoes a sign reversal as the bias voltage increases. This dependence cannot be explained by traditional models of MTJs. We propose an in-plane electron momentum (k//) resolved tunneling model that considers both the coherent degree of k// and the decay of the electron wave function through the semiconductor spacer layer. This can explain well the conventional and unconventional bias-dependent TMR. Our results thus provide a deeper understanding of the bias-dependent spin-transport in semiconductor-based MTJs and offer new insights into semiconductor spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_08784 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions Zhu, Wenkai Wen, Hui Zhu, Shouguo Cui, Qirui Xie, Shihong Ye, Meng Zhang, Gaojie Wu, Hao Zhang, Xiaomin Li, Weihao Huang, Yuqing Zhang, Jing Zhao, Lixia Patanè, Amalia Chang, Haixin Wang, Lin-Wang Wang, Kaiyou Materials Science Mesoscale and Nanoscale Physics Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and their high-quality interfaces. In the all-vdW magnetic tunnel junction (MTJ) devices, both the magnitude and sign of the TMR can be tuned by an applied voltage. Typically, as the bias voltage increases, first the amplitude of the TMR decreases, then the sign of the TMR reverses and/or oscillates. Here, we report on an unconventional bias-dependent TMR in the all-vdW Fe3GaTe2/GaSe/Fe3GaTe2 MTJs, where the TMR first increases, then decreases, and finally undergoes a sign reversal as the bias voltage increases. This dependence cannot be explained by traditional models of MTJs. We propose an in-plane electron momentum (k//) resolved tunneling model that considers both the coherent degree of k// and the decay of the electron wave function through the semiconductor spacer layer. This can explain well the conventional and unconventional bias-dependent TMR. Our results thus provide a deeper understanding of the bias-dependent spin-transport in semiconductor-based MTJs and offer new insights into semiconductor spintronics. |
| title | Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.08784 |