Microsecond Bias Polarity Switching Reveals Hidden Charge Dynamics at Halide Perovskite Interfaces
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866912593467146240 |
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| author | Betušiak, Marián Grill, Roman Belas, Eduard Praus, Petr Brynza, Mykola Karuppaiya, Mariselvam Ahmadi, Mahshid Yang, Jonghee Musiienko, Artem |
| author_facet | Betušiak, Marián Grill, Roman Belas, Eduard Praus, Petr Brynza, Mykola Karuppaiya, Mariselvam Ahmadi, Mahshid Yang, Jonghee Musiienko, Artem |
| contents | We present a time-domain technique based on rapid bias polarity switching (BiPS) to probe charge transport and near-surface defects in halide perovskite single crystals. The method exploits interfacial extraction barriers, which cause carrier accumulation and subsequent release after bias reversal. BiPS combines surface sensitivity (200 nm-2 $μ$m) with millimeter-scale reach, enabling reconstruction of internal field profiles, detection of bulk space charge down to $10^9$ cm$^{-3}$, and resolution of microsecond-millisecond trap dynamics. In our setup the surface-state detection limit is $10^9$ cm$^{-2}$, and could be further improved by optimized illumination and readout. Applied to melt-grown CsPbBr$_3$ (Cr/Cr) and solution-grown MAPbBr$_3$ (Cr/SnO$_2$/Cr), BiPS reveals interfacial barriers that drive hole accumulation and defect filling. CsPbBr$_3$ shows long-lived space charge ($\sim 3\times 10^{11}$ cm$^{-3}$) and $\sim 250\times$ faster hole extraction than MAPbBr$_3$, while trap analysis yields capture times of 1-100 $μ$s, detrapping times of 20 $μ$s-3 ms, and activation energies of 300-500 meV. BiPS thus provides direct access to buried interfacial processes, disentangles electronic and ionic contributions, and offers a robust platform for evaluating contacts and guiding defect engineering in perovskite optoelectronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2501_09047 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Microsecond Bias Polarity Switching Reveals Hidden Charge Dynamics at Halide Perovskite Interfaces Betušiak, Marián Grill, Roman Belas, Eduard Praus, Petr Brynza, Mykola Karuppaiya, Mariselvam Ahmadi, Mahshid Yang, Jonghee Musiienko, Artem Materials Science We present a time-domain technique based on rapid bias polarity switching (BiPS) to probe charge transport and near-surface defects in halide perovskite single crystals. The method exploits interfacial extraction barriers, which cause carrier accumulation and subsequent release after bias reversal. BiPS combines surface sensitivity (200 nm-2 $μ$m) with millimeter-scale reach, enabling reconstruction of internal field profiles, detection of bulk space charge down to $10^9$ cm$^{-3}$, and resolution of microsecond-millisecond trap dynamics. In our setup the surface-state detection limit is $10^9$ cm$^{-2}$, and could be further improved by optimized illumination and readout. Applied to melt-grown CsPbBr$_3$ (Cr/Cr) and solution-grown MAPbBr$_3$ (Cr/SnO$_2$/Cr), BiPS reveals interfacial barriers that drive hole accumulation and defect filling. CsPbBr$_3$ shows long-lived space charge ($\sim 3\times 10^{11}$ cm$^{-3}$) and $\sim 250\times$ faster hole extraction than MAPbBr$_3$, while trap analysis yields capture times of 1-100 $μ$s, detrapping times of 20 $μ$s-3 ms, and activation energies of 300-500 meV. BiPS thus provides direct access to buried interfacial processes, disentangles electronic and ionic contributions, and offers a robust platform for evaluating contacts and guiding defect engineering in perovskite optoelectronic devices. |
| title | Microsecond Bias Polarity Switching Reveals Hidden Charge Dynamics at Halide Perovskite Interfaces |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.09047 |