Ferroelectricity in layered bismuth oxide down to 1 nanometer
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arXiv
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| Format: | Preprint |
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2025
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| author | Yang, Qianqian Hu, Jingcong Fang, Yue-Wen Jia, Yueyang Yang, Rui Deng, Shiqing Lu, Yue Dieguez, Oswaldo Fan, Longlong Zheng, Dongxing Zhang, Xixiang Dong, Yongqi Luo, Zhenlin Wang, Zhen Wang, Huanhua Sui, Manling Xing, Xianran Chen, Jun Tian, Jianjun Zhang, Linxing |
| author_facet | Yang, Qianqian Hu, Jingcong Fang, Yue-Wen Jia, Yueyang Yang, Rui Deng, Shiqing Lu, Yue Dieguez, Oswaldo Fan, Longlong Zheng, Dongxing Zhang, Xixiang Dong, Yongqi Luo, Zhenlin Wang, Zhen Wang, Huanhua Sui, Manling Xing, Xianran Chen, Jun Tian, Jianjun Zhang, Linxing |
| contents | Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_09549 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferroelectricity in layered bismuth oxide down to 1 nanometer Yang, Qianqian Hu, Jingcong Fang, Yue-Wen Jia, Yueyang Yang, Rui Deng, Shiqing Lu, Yue Dieguez, Oswaldo Fan, Longlong Zheng, Dongxing Zhang, Xixiang Dong, Yongqi Luo, Zhenlin Wang, Zhen Wang, Huanhua Sui, Manling Xing, Xianran Chen, Jun Tian, Jianjun Zhang, Linxing Materials Science Mesoscale and Nanoscale Physics Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices. |
| title | Ferroelectricity in layered bismuth oxide down to 1 nanometer |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.09549 |