Electroluminescence in n-type GaAs unipolar nanoLEDs
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866913654725672960 |
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| author | Jacob, Bejoys Azevedo, João Nieder, Jana B. Romeira, Bruno |
| author_facet | Jacob, Bejoys Azevedo, João Nieder, Jana B. Romeira, Bruno |
| contents | In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10 pillar array. Hole generation through impact ionization and Zener tunnelling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes larger than 300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2 per cent at sub-mA current injection. These results demonstrate the potential for a new class of n-type nanoscale light-emitting devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_10142 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electroluminescence in n-type GaAs unipolar nanoLEDs Jacob, Bejoys Azevedo, João Nieder, Jana B. Romeira, Bruno Applied Physics Emerging Technologies Optics In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10 pillar array. Hole generation through impact ionization and Zener tunnelling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes larger than 300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2 per cent at sub-mA current injection. These results demonstrate the potential for a new class of n-type nanoscale light-emitting devices. |
| title | Electroluminescence in n-type GaAs unipolar nanoLEDs |
| topic | Applied Physics Emerging Technologies Optics |
| url | https://arxiv.org/abs/2501.10142 |