Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.10678 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866910958309343232 |
|---|---|
| author | Kumar, Prabhat Miura, Yoshio Kotani, Yoshinori Sumiyoshiya, Akiho Nakamura, Tetsuya Shukla, Gaurav K. Isogami, Shinji |
| author_facet | Kumar, Prabhat Miura, Yoshio Kotani, Yoshinori Sumiyoshiya, Akiho Nakamura, Tetsuya Shukla, Gaurav K. Isogami, Shinji |
| contents | MXenes have attracted considerable attention in recent years owing to their two-dimensional (2D) layered structures with various functionalities similar to those of graphene and transition metal dichalcogenides. To open a new application field for MXenes in the realm of electronic devices, such as ultrahigh-integrated magnetic memory, we have developed a spin-orbit torque (SOT) bilayer structure comprising bare MXene of Cr2N: substrate//Cr2N/[Co/Pt]3/MgO using the magnetron sputtering technique. We demonstrated field-free current-induced magnetization switching (CIMS) in the bilayer structure, regardless of the charge current directions with respect to the mirror symmetry lines of Cr2N crystal. This is a specific characteristic for the 2D MXene-based SOT-devices, originating from an unconventional out-of-plane SOT. As the SOT efficiency increases with increasing the Cr2N thickness, the first-principles calculations predict an intrinsic orbital-Hall conductivity with the dominant out-of-plane component, comparing to the spin-Hall conductivity in the Cr2N. X-ray magnetic circular dichroism reveals the out-of-plane uncompensated magnetic moment of Cr in the Cr2N layer at the interface, induced by contact with the Co in the [Co/Pt]3 ferromagnetic layer. Therefore, the intrinsic bulk orbital Hall effect in MXene and the interfacial contribution such as spin-filtering-like effect owing to uncompensated magnetic moment of Cr are considered as possible major mechanisms for the unconventional out-of-plane SOT in the device, rather than a crystal symmetry and/or an interlayer exchange coupling. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_10678 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories Kumar, Prabhat Miura, Yoshio Kotani, Yoshinori Sumiyoshiya, Akiho Nakamura, Tetsuya Shukla, Gaurav K. Isogami, Shinji Mesoscale and Nanoscale Physics Materials Science MXenes have attracted considerable attention in recent years owing to their two-dimensional (2D) layered structures with various functionalities similar to those of graphene and transition metal dichalcogenides. To open a new application field for MXenes in the realm of electronic devices, such as ultrahigh-integrated magnetic memory, we have developed a spin-orbit torque (SOT) bilayer structure comprising bare MXene of Cr2N: substrate//Cr2N/[Co/Pt]3/MgO using the magnetron sputtering technique. We demonstrated field-free current-induced magnetization switching (CIMS) in the bilayer structure, regardless of the charge current directions with respect to the mirror symmetry lines of Cr2N crystal. This is a specific characteristic for the 2D MXene-based SOT-devices, originating from an unconventional out-of-plane SOT. As the SOT efficiency increases with increasing the Cr2N thickness, the first-principles calculations predict an intrinsic orbital-Hall conductivity with the dominant out-of-plane component, comparing to the spin-Hall conductivity in the Cr2N. X-ray magnetic circular dichroism reveals the out-of-plane uncompensated magnetic moment of Cr in the Cr2N layer at the interface, induced by contact with the Co in the [Co/Pt]3 ferromagnetic layer. Therefore, the intrinsic bulk orbital Hall effect in MXene and the interfacial contribution such as spin-filtering-like effect owing to uncompensated magnetic moment of Cr are considered as possible major mechanisms for the unconventional out-of-plane SOT in the device, rather than a crystal symmetry and/or an interlayer exchange coupling. |
| title | Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2501.10678 |