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Autore principale: Hou, Ruyi
Natura: Preprint
Pubblicazione: 2025
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Accesso online:https://arxiv.org/abs/2501.10724
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author Hou, Ruyi
author_facet Hou, Ruyi
contents In this study, the Density of States (DOS) of CeO$_2$ was analyzed in detail using the Density Functional Theory (DFT) method based on VASP software. As an important functional material, CeO$_2$ finds wide applications in catalysis, optics, and electronic devices. Through structural optimization, self-consistent electronic calculations, and non-self-consistent calculations, we thoroughly investigated the crystal structure and electronic energy level distribution of CeO$_2$. The lattice parameter optimization results from the structural calculations indicated a stable crystal structure for CeO$_2$. Self-consistent electronic calculations revealed a bandgap of approximately 2.403 eV, with the valence band maximum primarily contributed by O 2p orbitals and the conduction band minimum mainly originating from Ce 4f orbitals. Non-self-consistent calculations further demonstrated the total DOS and partial DOS of CeO$_2$, confirming the significant roles of Ce 4f and O 2p states in its electronic conduction and optical properties. These results not only provide theoretical support for the applications of CeO$_2$ in catalysis and electronic materials but also deepen our understanding of its fundamental electronic structural characteristics, offering guidance for the design and development of novel CeO$_2$-based materials.
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spellingShingle Density of States Calculation of CeO$_2$ Based on VASP
Hou, Ruyi
Materials Science
Computational Physics
In this study, the Density of States (DOS) of CeO$_2$ was analyzed in detail using the Density Functional Theory (DFT) method based on VASP software. As an important functional material, CeO$_2$ finds wide applications in catalysis, optics, and electronic devices. Through structural optimization, self-consistent electronic calculations, and non-self-consistent calculations, we thoroughly investigated the crystal structure and electronic energy level distribution of CeO$_2$. The lattice parameter optimization results from the structural calculations indicated a stable crystal structure for CeO$_2$. Self-consistent electronic calculations revealed a bandgap of approximately 2.403 eV, with the valence band maximum primarily contributed by O 2p orbitals and the conduction band minimum mainly originating from Ce 4f orbitals. Non-self-consistent calculations further demonstrated the total DOS and partial DOS of CeO$_2$, confirming the significant roles of Ce 4f and O 2p states in its electronic conduction and optical properties. These results not only provide theoretical support for the applications of CeO$_2$ in catalysis and electronic materials but also deepen our understanding of its fundamental electronic structural characteristics, offering guidance for the design and development of novel CeO$_2$-based materials.
title Density of States Calculation of CeO$_2$ Based on VASP
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2501.10724