Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.10931 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866915110089392128 |
|---|---|
| author | Wang, Meng Zhang, Jianbing Tian, Di Yu, Pu Kagawa, Fumitaka |
| author_facet | Wang, Meng Zhang, Jianbing Tian, Di Yu, Pu Kagawa, Fumitaka |
| contents | The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been discussed mainly for materials with low-symmetry crystal/magnetic point groups. Here, we show that even if symmetry forbids an inherent IPHE that arises from any mechanism, an apparent IPHE can be generated by selecting a low-symmetry crystalline plane for measurement. For rutile RuO$_2$, although its high symmetry forbids an inherent IPHE, films grown along the low-symmetry (1 1 1) and (1 0 1) orientations are found to exhibit a distinct IPHE. The in-plane Hall coefficients are quantitatively reproduced by referring to the out-of-plane Hall coefficients measured for the high-symmetry (1 0 0) and (0 0 1) planes, indicating that the observed IPHE is caused by a superposition of inequivalent out-of-plane Hall effects. Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_10931 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unveiling an in-plane Hall effect in rutile RuO$_2$ films Wang, Meng Zhang, Jianbing Tian, Di Yu, Pu Kagawa, Fumitaka Materials Science The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been discussed mainly for materials with low-symmetry crystal/magnetic point groups. Here, we show that even if symmetry forbids an inherent IPHE that arises from any mechanism, an apparent IPHE can be generated by selecting a low-symmetry crystalline plane for measurement. For rutile RuO$_2$, although its high symmetry forbids an inherent IPHE, films grown along the low-symmetry (1 1 1) and (1 0 1) orientations are found to exhibit a distinct IPHE. The in-plane Hall coefficients are quantitatively reproduced by referring to the out-of-plane Hall coefficients measured for the high-symmetry (1 0 0) and (0 0 1) planes, indicating that the observed IPHE is caused by a superposition of inequivalent out-of-plane Hall effects. Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes. |
| title | Unveiling an in-plane Hall effect in rutile RuO$_2$ films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.10931 |