Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2025
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866909460983709696 |
|---|---|
| author | Kynshi, LuckyDonald L Soni, Umang Sharma, Chithra H and, Shengqiang Zhou Thalakulam, Madhu |
| author_facet | Kynshi, LuckyDonald L Soni, Umang Sharma, Chithra H and, Shengqiang Zhou Thalakulam, Madhu |
| contents | Shallow undoped Si/SiGe quantum wells are the leading platforms for hosting quantum processors based on spin-qubits. The ohmic contacts to the electron gas in these systems are accomplished by ion-implantation technique since the conventional Au/Sb alloyed contacts present a rough surface consisting of sharp islands and pits. These sharp protrusions cause electrical discharge across the gate-dielectric between the ohmic contacts and the accumulation-gates causing device break-down. A clear understanding of the surface morphology, elemental, compositional and electrical characterization of the alloyed region would enable one to engineer a smoother post alloyed surface. In this work, we find that the rough surface morphology is a cumulative effect of the Au/Si eutectic reaction and the threading dislocations inherent in the heterostructure. The structural, elemental, and chemical-state analysis show that the inverted pyramidal pits are resulting from the enhanced Au/Si eutectic reaction at the threading dislocations stemming from the heterostructure interface, while, the sharp protrusions causing accumulation gate-leakage are gold-rich precipitations. The protrusions are removed using an aqua regia treatment prior to the deposition of the gate-oxide and gate electrode. Exploiting a Hall bar device, we analyse the mobility and carrier concentration of the undoped Si/SiGe consisting of Au/Sb alloyed contacts down to 1.5 K. The measured mobility ~10^5 cm^2/Vs and carrier concentration of ~10^11/cm^2are comparable to the reported values on similar high-mobility heterostructures confirming the efficacy of our modified Au/Sb alloy technique in accomplishing high-efficiency contacts to undoped Si/SiGe heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_11059 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells Kynshi, LuckyDonald L Soni, Umang Sharma, Chithra H and, Shengqiang Zhou Thalakulam, Madhu Mesoscale and Nanoscale Physics Materials Science Shallow undoped Si/SiGe quantum wells are the leading platforms for hosting quantum processors based on spin-qubits. The ohmic contacts to the electron gas in these systems are accomplished by ion-implantation technique since the conventional Au/Sb alloyed contacts present a rough surface consisting of sharp islands and pits. These sharp protrusions cause electrical discharge across the gate-dielectric between the ohmic contacts and the accumulation-gates causing device break-down. A clear understanding of the surface morphology, elemental, compositional and electrical characterization of the alloyed region would enable one to engineer a smoother post alloyed surface. In this work, we find that the rough surface morphology is a cumulative effect of the Au/Si eutectic reaction and the threading dislocations inherent in the heterostructure. The structural, elemental, and chemical-state analysis show that the inverted pyramidal pits are resulting from the enhanced Au/Si eutectic reaction at the threading dislocations stemming from the heterostructure interface, while, the sharp protrusions causing accumulation gate-leakage are gold-rich precipitations. The protrusions are removed using an aqua regia treatment prior to the deposition of the gate-oxide and gate electrode. Exploiting a Hall bar device, we analyse the mobility and carrier concentration of the undoped Si/SiGe consisting of Au/Sb alloyed contacts down to 1.5 K. The measured mobility ~10^5 cm^2/Vs and carrier concentration of ~10^11/cm^2are comparable to the reported values on similar high-mobility heterostructures confirming the efficacy of our modified Au/Sb alloy technique in accomplishing high-efficiency contacts to undoped Si/SiGe heterostructures. |
| title | Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2501.11059 |