Cover Image

Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Kynshi, LuckyDonald L, Soni, Umang, Sharma, Chithra H, and, Shengqiang Zhou, Thalakulam, Madhu
Format:	Preprint
Published:	2025
Subjects:	Mesoscale and Nanoscale Physics Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Density-driven scattering and valley splitting in undoped Si/SiGe two-dimensional electron system
by: Kynshi, Lucky Donald Lyngdoh, et al.
Published: (2025)

Active Noise Reduction in Si/SiGe Gated Quantum Dots
by: Bharadwaj, Rajat, et al.
Published: (2025)

Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure
by: Rastogi, S, et al.
Published: (2026)

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
by: Losert, Merritt P., et al.
Published: (2024)

Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
by: Németh, Róbert, et al.
Published: (2024)

Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells
by: Colmenar, R. K. L., et al.
Published: (2026)

Reducing disorder in Ge quantum wells by using thick SiGe barriers
by: Costa, Davide, et al.
Published: (2024)

Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
by: Dick, Daniel, et al.
Published: (2026)

The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
by: Losert, Merritt P. R., et al.
Published: (2025)

Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells
by: Losert, Merritt P. R., et al.
Published: (2026)

High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
by: Ruggiero, Luigi, et al.
Published: (2025)

On-chip cryogenic multiplexing of Si/SiGe quantum devices
by: Wolfe, M. A., et al.
Published: (2024)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
by: Ma, Jingrui, et al.
Published: (2026)

Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
by: Huang, Yi, et al.
Published: (2023)

Characterization of individual charge fluctuators in Si/SiGe quantum dots
by: Ye, Feiyang, et al.
Published: (2024)

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
by: Jacobson, N. Tobias, et al.
Published: (2026)

Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
by: Stehouwer, Lucas E. A., et al.
Published: (2025)

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
by: Ye, Feiyang, et al.
Published: (2024)

Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
by: Daoust, P., et al.
Published: (2025)

Electrical Characterization of hexagonal SiGe
by: Bollier, Isabelle, et al.
Published: (2025)

Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder
by: Young, Steve M., et al.
Published: (2025)

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
by: Wang, Ning, et al.
Published: (2024)

Control of threshold voltages in Si/SiGe quantum devices via optical illumination
by: Wolfe, M. A., et al.
Published: (2023)

High-fidelity EDSR in Si/SiGe Wiggle Wells
by: Soomro, Hudaiba, et al.
Published: (2026)

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
by: Woods, Benjamin D., et al.
Published: (2023)

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
by: Losert, Merritt P., et al.
Published: (2023)

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
by: Cvitkovich, Lukas, et al.
Published: (2026)

Multi-level charge fluctuations in a Si/SiGe double quantum dot device
by: Albrecht, Dylan, et al.
Published: (2026)

Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
by: Nagai, Ryo, et al.
Published: (2026)

Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
by: Samadi, Saeed, et al.
Published: (2025)

g-tensor Optimization in Ge/SiGe Quantum Dots
by: Shojaei, Aram, et al.
Published: (2026)

Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions
by: Imakire, K., et al.
Published: (2024)

Cryogenic microwave frequency combs based on quantum paraelectric superconducting resonators
by: Muragesh, Prasad, et al.
Published: (2026)

Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
by: Marcogliese, Lucas, et al.
Published: (2025)

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
by: Fattal, I., et al.
Published: (2025)

g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects
by: Woods, Benjamin D., et al.
Published: (2024)

Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
by: Benson, Jared, et al.
Published: (2026)

Conveyor-mode electron shuttling through a T-junction in Si/SiGe
by: Beer, Max, et al.
Published: (2026)

Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
by: Sommer, L., et al.
Published: (2026)

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
by: Kępa, Marcin, et al.
Published: (2023)