Ultrahigh interfacial thermal conductance for cooling gallium oxide electronics using cubic boron arsenide
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866908567580180480 |
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| author | Zhou, Wenjiang Liang, Nianjie Xiao, Wei Tong, Zhaofei Tian, Fei Song, Bai |
| author_facet | Zhou, Wenjiang Liang, Nianjie Xiao, Wei Tong, Zhaofei Tian, Fei Song, Bai |
| contents | Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an effective cooling strategy centering on the heterogeneous integration of $β$-Ga$_2$O$_3$ devices with cubic boron arsenide (cBAs), an emerging material with an ultrahigh thermal conductivity $κ$ of ~1300 Wm$^{-1}$K$^{-1}$. Machine-learned potentials for representative $β$-Ga$_2$O$_3$/cBAs interfaces are trained, enabling accurate and efficient calculation of the interfacial thermal conductance $G$ via nonequilibrium molecular dynamics. At 300 K, remarkable $G$ values of 749$\pm$33 MWm$^{-2}$K$^{-1}$ and 824$\pm$35 MWm$^{-2}$K$^{-1}$ are predicted for Ga-As and O-B bonding across the interface, respectively, which are primarily attributed to the well-matched phonon density of states considering the similar Debye temperatures of $β$-Ga$_2$O$_3$ and cBAs. Moreover, finite-element simulations directly show a notable device temperature reduction when comparing cBAs with other substrates. The simultaneously ultrahigh $κ$ and $G$ highlight cBAs as an ideal substrate for Ga$_2$O$_3$ electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_11082 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ultrahigh interfacial thermal conductance for cooling gallium oxide electronics using cubic boron arsenide Zhou, Wenjiang Liang, Nianjie Xiao, Wei Tong, Zhaofei Tian, Fei Song, Bai Materials Science Other Condensed Matter Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an effective cooling strategy centering on the heterogeneous integration of $β$-Ga$_2$O$_3$ devices with cubic boron arsenide (cBAs), an emerging material with an ultrahigh thermal conductivity $κ$ of ~1300 Wm$^{-1}$K$^{-1}$. Machine-learned potentials for representative $β$-Ga$_2$O$_3$/cBAs interfaces are trained, enabling accurate and efficient calculation of the interfacial thermal conductance $G$ via nonequilibrium molecular dynamics. At 300 K, remarkable $G$ values of 749$\pm$33 MWm$^{-2}$K$^{-1}$ and 824$\pm$35 MWm$^{-2}$K$^{-1}$ are predicted for Ga-As and O-B bonding across the interface, respectively, which are primarily attributed to the well-matched phonon density of states considering the similar Debye temperatures of $β$-Ga$_2$O$_3$ and cBAs. Moreover, finite-element simulations directly show a notable device temperature reduction when comparing cBAs with other substrates. The simultaneously ultrahigh $κ$ and $G$ highlight cBAs as an ideal substrate for Ga$_2$O$_3$ electronics. |
| title | Ultrahigh interfacial thermal conductance for cooling gallium oxide electronics using cubic boron arsenide |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2501.11082 |