Overdamped van der Waals Josephson junctions by area engineering

Fuente: arXiv
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Main Authors: Sunny, Annu Anns, Choubey, H, Khola, A, Narayanan, S, Bharadwaj, R, Gireesan, P, Thalakulam, Madhu
Format: Preprint
Published: 2025
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_version_ 1866929682350342144
author Sunny, Annu Anns
Choubey, H
Khola, A
Narayanan, S
Bharadwaj, R
Gireesan, P
Thalakulam, Madhu
author_facet Sunny, Annu Anns
Choubey, H
Khola, A
Narayanan, S
Bharadwaj, R
Gireesan, P
Thalakulam, Madhu
contents Van der Waals (vW) Josephson junctions (JJs) realized by stacking materials such as few-layered NbSe2, offers a new landscape to realize superconducting quantum devices with superior properties owing to its crystalline nature and defect-free junctions. For quantum technology, overdamped JJs are highly sought-after, whose realization demands precise control of junction capacitance by engineering the junction area using microfabrication techniques. NbSe2 is highly reactive and susceptible to damage during microfabrication processes. In this manuscript, we demonstrate both underdamped and overdamped NbSe2-NbSe2 JJs by controlling the junction area. We devise a minimally invasive microfabrication procedure, post-junction formation, to precisely control the junction area. The McCumber parameter characterizing the damping is extracted from the electrical transport measurements down to 130 mK. The results show that our sample fabrication recipe has preserved the material qualities and paved the way for the realization of scalable JJ devices on NbSe2 and similar systems.
format Preprint
id arxiv_https___arxiv_org_abs_2501_11300
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Overdamped van der Waals Josephson junctions by area engineering
Sunny, Annu Anns
Choubey, H
Khola, A
Narayanan, S
Bharadwaj, R
Gireesan, P
Thalakulam, Madhu
Mesoscale and Nanoscale Physics
Van der Waals (vW) Josephson junctions (JJs) realized by stacking materials such as few-layered NbSe2, offers a new landscape to realize superconducting quantum devices with superior properties owing to its crystalline nature and defect-free junctions. For quantum technology, overdamped JJs are highly sought-after, whose realization demands precise control of junction capacitance by engineering the junction area using microfabrication techniques. NbSe2 is highly reactive and susceptible to damage during microfabrication processes. In this manuscript, we demonstrate both underdamped and overdamped NbSe2-NbSe2 JJs by controlling the junction area. We devise a minimally invasive microfabrication procedure, post-junction formation, to precisely control the junction area. The McCumber parameter characterizing the damping is extracted from the electrical transport measurements down to 130 mK. The results show that our sample fabrication recipe has preserved the material qualities and paved the way for the realization of scalable JJ devices on NbSe2 and similar systems.
title Overdamped van der Waals Josephson junctions by area engineering
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2501.11300