Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866916704759578624 |
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| author | Oshnik, Nimba Westrich, Sebastian Burmeister, Nina Opaluch, Oliver Roman Mehmel, Lahcene Issaoui, Riadh Tallaire, Alexandre Brinza, Ovidiu Achard, Jocelyn Neu, Elke |
| author_facet | Oshnik, Nimba Westrich, Sebastian Burmeister, Nina Opaluch, Oliver Roman Mehmel, Lahcene Issaoui, Riadh Tallaire, Alexandre Brinza, Ovidiu Achard, Jocelyn Neu, Elke |
| contents | Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g., via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of microseconds, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal strain in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_11481 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies Oshnik, Nimba Westrich, Sebastian Burmeister, Nina Opaluch, Oliver Roman Mehmel, Lahcene Issaoui, Riadh Tallaire, Alexandre Brinza, Ovidiu Achard, Jocelyn Neu, Elke Materials Science Mesoscale and Nanoscale Physics Quantum Physics Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g., via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of microseconds, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal strain in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes. |
| title | Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies |
| topic | Materials Science Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2501.11481 |