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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.11492 |
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Table of Contents:
- A thin cobalt layer is deposited by electron beam evaporation onto a germanium substrate after an in situ cleaning annealing at 400 or 700 C. The effect of these pretreatments on the Co/Ge Schottky barrier properties and on the germanide formation is investigated by using different techniques. A strong influence of the pre-treatment is observed. The pre-treatment at 700 C removes the native oxide but enhances the diffusion of contaminants. After post-metal deposition annealing, the sample pre-treated at 700 C shows a double layer structure due to interdiffusion, whereas some large isolated islands are present in the sample pre-treated at 400 C.