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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.12455 |
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Table of Contents:
- In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered threedimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size less than 4.0 nm, have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusionmediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.