Tracking the creation of single photon emitters in AlN by implantation and annealing
Fuente:
arXiv
Saved in:
| Main Authors: | Yağcı, H. B., Hernández, E. Nieto, Cannon, J. K., Bishop, S. G., Corte, E., Hadden, J. P., Olivero, P., Forneris, J., Bennett, A. J. |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
by: Hernández, E. Nieto, et al.
Published: (2023)
by: Hernández, E. Nieto, et al.
Published: (2023)
Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
by: Andrini, G., et al.
Published: (2023)
by: Andrini, G., et al.
Published: (2023)
Photoactivation of color centers induced by laser irradiation in ion-implanted diamond
by: Pugliese, V., et al.
Published: (2024)
by: Pugliese, V., et al.
Published: (2024)
Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
by: Hamid, Md Abdul, et al.
Published: (2026)
by: Hamid, Md Abdul, et al.
Published: (2026)
AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
by: Gündogdu, Sinan, et al.
Published: (2023)
by: Gündogdu, Sinan, et al.
Published: (2023)
Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode
by: Boiko, D. L., et al.
Published: (2025)
by: Boiko, D. L., et al.
Published: (2025)
AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
by: Buatip, N., et al.
Published: (2024)
by: Buatip, N., et al.
Published: (2024)
Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
by: Mudiyanselage, Dinusha Herath, et al.
Published: (2024)
by: Mudiyanselage, Dinusha Herath, et al.
Published: (2024)
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
by: Chen, Yu-Hsin, et al.
Published: (2025)
by: Chen, Yu-Hsin, et al.
Published: (2025)
Femtosecond laser-written nano-ablations containing bright antibunched emitters on gallium nitride
by: Guo, Yanzhao, et al.
Published: (2025)
by: Guo, Yanzhao, et al.
Published: (2025)
Experimental observation of ballistic to diffusive transition in AlN thin films
by: Hoque, Md Shafkat Bin, et al.
Published: (2024)
by: Hoque, Md Shafkat Bin, et al.
Published: (2024)
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
by: Kim, Eungkyun, et al.
Published: (2025)
by: Kim, Eungkyun, et al.
Published: (2025)
Self-injection locking dynamics with Raman actions in AlN microresonators
by: Ding, Yulei, et al.
Published: (2025)
by: Ding, Yulei, et al.
Published: (2025)
Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)
Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles
by: Wang, Ruiqing, et al.
Published: (2025)
by: Wang, Ruiqing, et al.
Published: (2025)
Development of TiN/AlN-based superconducting qubit components
by: Schoof, Benedikt, et al.
Published: (2024)
by: Schoof, Benedikt, et al.
Published: (2024)
Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
by: Pampili, Pietro, et al.
Published: (2024)
by: Pampili, Pietro, et al.
Published: (2024)
Thin Film AlN Microbolometer for Very Long-Wave Infrared Detection
by: Tallavajhula, Vivek, et al.
Published: (2026)
by: Tallavajhula, Vivek, et al.
Published: (2026)
Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
by: Gulupalli, Hemant, et al.
Published: (2026)
by: Gulupalli, Hemant, et al.
Published: (2026)
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
by: Cardinael, Pieter, et al.
Published: (2024)
by: Cardinael, Pieter, et al.
Published: (2024)
Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion
by: Yao, Ziqian, et al.
Published: (2026)
by: Yao, Ziqian, et al.
Published: (2026)
Photo-dynamics of quantum emitters in aluminum nitride
by: Guo, Yanzhao, et al.
Published: (2023)
by: Guo, Yanzhao, et al.
Published: (2023)
Controlled epitaxy of room-temperature quantum emitters in gallium nitride
by: Eggleton, Katie M., et al.
Published: (2026)
by: Eggleton, Katie M., et al.
Published: (2026)
Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
by: Huang, H-W S., et al.
Published: (2025)
by: Huang, H-W S., et al.
Published: (2025)
Si/AlN p-n heterojunction interfaced with ultrathin SiO2
by: Abbasi, Haris Naeem, et al.
Published: (2024)
by: Abbasi, Haris Naeem, et al.
Published: (2024)
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
by: Gačević, Ž., et al.
Published: (2024)
by: Gačević, Ž., et al.
Published: (2024)
A Liquid Density Sensor Based On AlN Piezoelectric Micromachined Ultrasonic Transmitter Insensitive to Liquid Viscosity
by: Fu, Xuecong, et al.
Published: (2026)
by: Fu, Xuecong, et al.
Published: (2026)
Rapid quench annealing of Er implanted Si for quantum networking applications
by: Hughes, Mark A., et al.
Published: (2024)
by: Hughes, Mark A., et al.
Published: (2024)
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
by: Jamil, Tariq, et al.
Published: (2026)
by: Jamil, Tariq, et al.
Published: (2026)
Tracking solid oxide cell electrode microstructural evolution during annealing by scanning 3D X-ray diffraction microscopy
by: Shukla, A., et al.
Published: (2024)
by: Shukla, A., et al.
Published: (2024)
High-efficiency, cryogenic-compatible grating couplers on an AlN-on-sapphire platform through bottom-side coupling
by: Zhou, Yiyu, et al.
Published: (2024)
by: Zhou, Yiyu, et al.
Published: (2024)
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)
Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters
by: Cañas, Jesus, et al.
Published: (2023)
by: Cañas, Jesus, et al.
Published: (2023)
Nanomechanical crystalline AlN resonators with high quality factors for quantum optoelectromechanics
by: Ciers, Anastasiia, et al.
Published: (2024)
by: Ciers, Anastasiia, et al.
Published: (2024)
Mutually synchronized macroscopic Josephson oscillations demonstrated by polarization analysis of superconducting terahertz emitters
by: Tsujimoto, M., et al.
Published: (2020)
by: Tsujimoto, M., et al.
Published: (2020)
Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure
by: Alapatt, Varghese, et al.
Published: (2024)
by: Alapatt, Varghese, et al.
Published: (2024)
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)
Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2025)
by: Dinh, Duc V., et al.
Published: (2025)
Graphene thermal infrared emitters integrated into silicon photonic waveguides
by: Negm, Nour, et al.
Published: (2023)
by: Negm, Nour, et al.
Published: (2023)
The origin and promise of transition metal dichalcogenide hosted single photon emitters for quantum technologies
by: Chhaperwal, Mayank, et al.
Published: (2026)
by: Chhaperwal, Mayank, et al.
Published: (2026)
Similar Items
-
Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
by: Hernández, E. Nieto, et al.
Published: (2023) -
Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
by: Andrini, G., et al.
Published: (2023) -
Photoactivation of color centers induced by laser irradiation in ion-implanted diamond
by: Pugliese, V., et al.
Published: (2024) -
Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
by: Hamid, Md Abdul, et al.
Published: (2026) -
AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
by: Gündogdu, Sinan, et al.
Published: (2023)