Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.12744 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866912842139041792 |
|---|---|
| author | Lefaucher, Baptiste Baron, Yoann Jager, Jean-Baptiste Calvo, Vincent Elsässer, Christian Coppola, Giuliano Mazen, Frédéric Kerdilès, Sébastien Cache, Félix Dréau, Anaïs Gérard, Jean-Michel |
| author_facet | Lefaucher, Baptiste Baron, Yoann Jager, Jean-Baptiste Calvo, Vincent Elsässer, Christian Coppola, Giuliano Mazen, Frédéric Kerdilès, Sébastien Cache, Félix Dréau, Anaïs Gérard, Jean-Michel |
| contents | We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. The color center consists of a single W center, created at a well-defined position by Si$^{+}$ ion implantation through a 150 nm-diameter nanohole in a mask. A circular Bragg grating cavity resonant with the W's zero-phonon line at 1217 nm is fabricated at the same location as the nanohole. By Purcell enhancement of zero-phonon emission, we obtain a photon count rate of $1.29 \pm 0.01$ Mcounts/s at saturation under above-gap continuous-wave excitation with a Debye-Waller factor of $98.6\pm1.4 \%$. A clean photon antibunching behavior is observed up to pump powers ensuring saturation of the W's emission ($g^{(2)}(0)=0.06\pm0.02$ at $P=9.2P_{sat}$), evidencing that the density of additional parasitic fluorescent defects is very low. We also demonstrate the triggered emission of single photons with $93\pm2 \%$ purity under weak pulsed laser excitation. At high pulsed laser power, we reveal a detrimental effect of repumping processes, that could be mitigated using selective pumping schemes in the future. These results represent a major step towards on-demand sources of indistinguishable near-infrared single photons within silicon photonics chips. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_12744 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Bright and pure single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity Lefaucher, Baptiste Baron, Yoann Jager, Jean-Baptiste Calvo, Vincent Elsässer, Christian Coppola, Giuliano Mazen, Frédéric Kerdilès, Sébastien Cache, Félix Dréau, Anaïs Gérard, Jean-Michel Optics Quantum Physics We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. The color center consists of a single W center, created at a well-defined position by Si$^{+}$ ion implantation through a 150 nm-diameter nanohole in a mask. A circular Bragg grating cavity resonant with the W's zero-phonon line at 1217 nm is fabricated at the same location as the nanohole. By Purcell enhancement of zero-phonon emission, we obtain a photon count rate of $1.29 \pm 0.01$ Mcounts/s at saturation under above-gap continuous-wave excitation with a Debye-Waller factor of $98.6\pm1.4 \%$. A clean photon antibunching behavior is observed up to pump powers ensuring saturation of the W's emission ($g^{(2)}(0)=0.06\pm0.02$ at $P=9.2P_{sat}$), evidencing that the density of additional parasitic fluorescent defects is very low. We also demonstrate the triggered emission of single photons with $93\pm2 \%$ purity under weak pulsed laser excitation. At high pulsed laser power, we reveal a detrimental effect of repumping processes, that could be mitigated using selective pumping schemes in the future. These results represent a major step towards on-demand sources of indistinguishable near-infrared single photons within silicon photonics chips. |
| title | Bright and pure single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity |
| topic | Optics Quantum Physics |
| url | https://arxiv.org/abs/2501.12744 |