Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening
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arXiv
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866915115975049216 |
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| author | Prasad, Madhava Krishna Goss, Jonathan Paul Mar, Jonathan David |
| author_facet | Prasad, Madhava Krishna Goss, Jonathan Paul Mar, Jonathan David |
| contents | Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms of charge control for these defect color centers in hBN/graphene heterostructures. In this Letter, we show that screening due to the encapsulation of hBN with graphene modifies the electrical levels of hBN, leading to charge transfer. Furthermore, we show that the charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. This study shows that accurate modeling of the charge state of the defect is necessary to be able to electrically control defects. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_12852 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening Prasad, Madhava Krishna Goss, Jonathan Paul Mar, Jonathan David Materials Science Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms of charge control for these defect color centers in hBN/graphene heterostructures. In this Letter, we show that screening due to the encapsulation of hBN with graphene modifies the electrical levels of hBN, leading to charge transfer. Furthermore, we show that the charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. This study shows that accurate modeling of the charge state of the defect is necessary to be able to electrically control defects. |
| title | Charging of quantum emitters in hexagonal boron nitride - graphene heterostructures due to electrostatic screening |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.12852 |