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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.13342 |
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Table of Contents:
- VSe$_2$ is a highly promising van der Waals (vdW) material for applications in electronics, spintronics, and optoelectronics. Here, we report single crystal growth of 1T-VSe$_2$ by flux method using eutectic of NaCl/KCl molten salt. The typical size of as-grown VSe$_2$ single crystals is 5 $\times$ 4 $\times$ 0.1~mm$^3$. The elemental composition and homogeneity of the crystals were examined by energy dispersive x-ray spectroscopy, which is consistent with the stoichiometric ratio of VSe$_2$. The crystallographic [001] direction has been determined by x-ray diffraction. Raman measurement confirms that the 1T phase of VSe$_2$ has been formed. Temperature-dependent resistivity measurement exhibits a transition around 104 K due to the formation of the charge density wave phase.