New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866910795474927616 |
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| author | Alonso-Gonzalez, Pablo González, Luisa González, Yolanda Fuster, David FernándezMartínez, Iván Martín-Sanchez, Javier Abelmann, Leon |
| author_facet | Alonso-Gonzalez, Pablo González, Luisa González, Yolanda Fuster, David FernándezMartínez, Iván Martín-Sanchez, Javier Abelmann, Leon |
| contents | This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_13438 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates Alonso-Gonzalez, Pablo González, Luisa González, Yolanda Fuster, David FernándezMartínez, Iván Martín-Sanchez, Javier Abelmann, Leon Materials Science Mesoscale and Nanoscale Physics This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates. |
| title | New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.13438 |