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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.13441 |
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| _version_ | 1866917900432965632 |
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| author | Alonso-González, Pablo Martín-González, María S. Martín-Sánchez, Javier González, Yolanda González, Luisa |
| author_facet | Alonso-González, Pablo Martín-González, María S. Martín-Sánchez, Javier González, Yolanda González, Luisa |
| contents | In this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel alumina (NCA) mask and transferring its self-ordering to the underlying GaAs substrate by continuing the anodization process once the GaAs surface is reached. After patterning, the GaAs substrate follows a low temperature process for surface preparation before epitaxial growth for QD formation. As a final result, we observe that the nanoholes act as preferential nucleation sites for InAs QD formation, with a filling factor close to unity, while the QD formation on the surface region between the pattern holes is completely suppressed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_13441 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ordered InAs QDs using prepatterned substrates by monolithically integrated porous alumina Alonso-González, Pablo Martín-González, María S. Martín-Sánchez, Javier González, Yolanda González, Luisa Materials Science Mesoscale and Nanoscale Physics In this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel alumina (NCA) mask and transferring its self-ordering to the underlying GaAs substrate by continuing the anodization process once the GaAs surface is reached. After patterning, the GaAs substrate follows a low temperature process for surface preparation before epitaxial growth for QD formation. As a final result, we observe that the nanoholes act as preferential nucleation sites for InAs QD formation, with a filling factor close to unity, while the QD formation on the surface region between the pattern holes is completely suppressed. |
| title | Ordered InAs QDs using prepatterned substrates by monolithically integrated porous alumina |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2501.13441 |