Origin of performance enhancement of superconducting nanowire single-photon detectors by He-ion irradiation

Fuente: arXiv
Enregistré dans:
Détails bibliographiques
Auteurs principaux: Strohauer, Stefan, Wietschorke, Fabian, Döblinger, Markus, Schmid, Christian, Grotowski, Stefanie, Zugliani, Lucio, Jonas, Björn, Müller, Kai, Finley, Jonathan J.
Format: Preprint
Publié: 2025
Sujets:
Accès en ligne:
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
_version_ 1866913873822482432
author Strohauer, Stefan
Wietschorke, Fabian
Döblinger, Markus
Schmid, Christian
Grotowski, Stefanie
Zugliani, Lucio
Jonas, Björn
Müller, Kai
Finley, Jonathan J.
author_facet Strohauer, Stefan
Wietschorke, Fabian
Döblinger, Markus
Schmid, Christian
Grotowski, Stefanie
Zugliani, Lucio
Jonas, Björn
Müller, Kai
Finley, Jonathan J.
contents Superconducting nanowire single-photon detectors (SNSPDs) are indispensable in fields such as quantum science and technology, astronomy, and biomedical imaging, where high detection efficiency, low dark count rates and high timing accuracy are required. Recently, helium (He) ion irradiation was shown to be a promising method to enhance SNSPD performance. Here, we study how changes in the underlying superconducting NbTiN film and the SiO2/Si substrate affect device performance. While irradiated and unirradiated NbTiN films show similar crystallinity, we observe He bubble formation below the SiO2/Si interface and an amorphization of the Si substrate. Both reduce the thermal conductance between the superconducting thin film and the substrate from 210 W/m^2/K^4 to 70 W/m^2/K^4 after irradiation with 2000 ions/nm^2. This effect, combined with the lateral straggle of He ions in the substrate, allows the modification of the superconductor-to-substrate thermal conductance of an SNSPD by selectively irradiating the regions around the nanowire. With this approach, we achieved an increased plateau width of saturating intrinsic detection efficiency of 9.8 uA compared to 3.7 uA after full irradiation. Moreover, the critical current remained similar to that of the unirradiated reference device (59 uA versus 60.1 uA), while full irradiation reduced it to 22.4 uA. Our results suggest that the irradiation-induced reduction of the thermal conductance significantly enhances SNSPD sensitivity, offering a novel approach to locally engineer substrate properties for improved detector performance.
format Preprint
id arxiv_https___arxiv_org_abs_2501_14965
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Origin of performance enhancement of superconducting nanowire single-photon detectors by He-ion irradiation
Strohauer, Stefan
Wietschorke, Fabian
Döblinger, Markus
Schmid, Christian
Grotowski, Stefanie
Zugliani, Lucio
Jonas, Björn
Müller, Kai
Finley, Jonathan J.
Quantum Physics
Mesoscale and Nanoscale Physics
Superconductivity
Instrumentation and Detectors
Optics
Superconducting nanowire single-photon detectors (SNSPDs) are indispensable in fields such as quantum science and technology, astronomy, and biomedical imaging, where high detection efficiency, low dark count rates and high timing accuracy are required. Recently, helium (He) ion irradiation was shown to be a promising method to enhance SNSPD performance. Here, we study how changes in the underlying superconducting NbTiN film and the SiO2/Si substrate affect device performance. While irradiated and unirradiated NbTiN films show similar crystallinity, we observe He bubble formation below the SiO2/Si interface and an amorphization of the Si substrate. Both reduce the thermal conductance between the superconducting thin film and the substrate from 210 W/m^2/K^4 to 70 W/m^2/K^4 after irradiation with 2000 ions/nm^2. This effect, combined with the lateral straggle of He ions in the substrate, allows the modification of the superconductor-to-substrate thermal conductance of an SNSPD by selectively irradiating the regions around the nanowire. With this approach, we achieved an increased plateau width of saturating intrinsic detection efficiency of 9.8 uA compared to 3.7 uA after full irradiation. Moreover, the critical current remained similar to that of the unirradiated reference device (59 uA versus 60.1 uA), while full irradiation reduced it to 22.4 uA. Our results suggest that the irradiation-induced reduction of the thermal conductance significantly enhances SNSPD sensitivity, offering a novel approach to locally engineer substrate properties for improved detector performance.
title Origin of performance enhancement of superconducting nanowire single-photon detectors by He-ion irradiation
topic Quantum Physics
Mesoscale and Nanoscale Physics
Superconductivity
Instrumentation and Detectors
Optics
url https://arxiv.org/abs/2501.14965