Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chen, Zhao-Hui, Liao, Xin, Dong, Jing-Wei, Liu, Xing-Yu, Zhao, Tong-Yang, Li, Dong, Wang, An-Qi, Liao, Zhi-Min
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866915122491949056
author Chen, Zhao-Hui
Liao, Xin
Dong, Jing-Wei
Liu, Xing-Yu
Zhao, Tong-Yang
Li, Dong
Wang, An-Qi
Liao, Zhi-Min
author_facet Chen, Zhao-Hui
Liao, Xin
Dong, Jing-Wei
Liu, Xing-Yu
Zhao, Tong-Yang
Li, Dong
Wang, An-Qi
Liao, Zhi-Min
contents We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1$T$-phase VSe$_2$ nanosheets, synthesized using chemical vapor deposition (CVD). The nanosheets exhibit a charge density wave (CDW) transition at $\sim$77 K. Detailed angle-resolved and temperature-dependent measurements reveal a strong cubic relationship between the third-harmonic Hall voltage $V_{3ω}^\perp$ and the bias current $I_ω$, persisting up to room temperature. Notably, the third-order NLHE demonstrates a twofold angular dependence and significant enhancement below the CDW transition temperature, indicative of threefold symmetry breaking in the CDW phase. Scaling analysis suggests that the intrinsic contribution from the Berry connection polarizability tensor is substantially increased in the CDW phase, while extrinsic effects dominate at higher temperatures. Our findings highlight the critical role of CDW-induced symmetry breaking in modulating quantum geometric properties and nonlinear transport phenomena in VSe$_2$, paving the way for future explorations in low-dimensional quantum materials.
format Preprint
id arxiv_https___arxiv_org_abs_2501_15097
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets
Chen, Zhao-Hui
Liao, Xin
Dong, Jing-Wei
Liu, Xing-Yu
Zhao, Tong-Yang
Li, Dong
Wang, An-Qi
Liao, Zhi-Min
Mesoscale and Nanoscale Physics
Materials Science
We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1$T$-phase VSe$_2$ nanosheets, synthesized using chemical vapor deposition (CVD). The nanosheets exhibit a charge density wave (CDW) transition at $\sim$77 K. Detailed angle-resolved and temperature-dependent measurements reveal a strong cubic relationship between the third-harmonic Hall voltage $V_{3ω}^\perp$ and the bias current $I_ω$, persisting up to room temperature. Notably, the third-order NLHE demonstrates a twofold angular dependence and significant enhancement below the CDW transition temperature, indicative of threefold symmetry breaking in the CDW phase. Scaling analysis suggests that the intrinsic contribution from the Berry connection polarizability tensor is substantially increased in the CDW phase, while extrinsic effects dominate at higher temperatures. Our findings highlight the critical role of CDW-induced symmetry breaking in modulating quantum geometric properties and nonlinear transport phenomena in VSe$_2$, paving the way for future explorations in low-dimensional quantum materials.
title Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2501.15097