Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering-type scanning near-field optical microscope

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Niehues, Iris, Wigger, Daniel, Kaltenecker, Korbinian, Klein-Hitpass, Annika, Roelli, Philippe, Dąbrowska, Aleksandra K., Ludwiczak, Katarzyna, Tatarczak, Piotr, Becker, Janne O., Schmidt, Robert, Schnell, Martin, Binder, Johannes, Wysmołek, Andrzej, Hillenbrand, Rainer
Formato: Preprint
Publicado: 2025
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866911415020814336
author Niehues, Iris
Wigger, Daniel
Kaltenecker, Korbinian
Klein-Hitpass, Annika
Roelli, Philippe
Dąbrowska, Aleksandra K.
Ludwiczak, Katarzyna
Tatarczak, Piotr
Becker, Janne O.
Schmidt, Robert
Schnell, Martin
Binder, Johannes
Wysmołek, Andrzej
Hillenbrand, Rainer
author_facet Niehues, Iris
Wigger, Daniel
Kaltenecker, Korbinian
Klein-Hitpass, Annika
Roelli, Philippe
Dąbrowska, Aleksandra K.
Ludwiczak, Katarzyna
Tatarczak, Piotr
Becker, Janne O.
Schmidt, Robert
Schnell, Martin
Binder, Johannes
Wysmołek, Andrzej
Hillenbrand, Rainer
contents Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excitation and emission through interaction with the nanofocus of the tip resulting in a sub-diffraction limited tip-enhanced PL hotspot. On the other hand, we show that indirect excitation and emission via scattering from the tip significantly increases the recorded PL intensity. This demonstrates that the tip-assisted PL (TAPL) process efficiently guides the generated light to the detector. We apply the TAPL method to map the in-plane dipole orientations of the hBN color centers on the nanoscale. This work promotes the widely available s-SNOM approach to applications in the quantum domain including characterization and optical control.
format Preprint
id arxiv_https___arxiv_org_abs_2501_15216
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering-type scanning near-field optical microscope
Niehues, Iris
Wigger, Daniel
Kaltenecker, Korbinian
Klein-Hitpass, Annika
Roelli, Philippe
Dąbrowska, Aleksandra K.
Ludwiczak, Katarzyna
Tatarczak, Piotr
Becker, Janne O.
Schmidt, Robert
Schnell, Martin
Binder, Johannes
Wysmołek, Andrzej
Hillenbrand, Rainer
Mesoscale and Nanoscale Physics
Optics
Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excitation and emission through interaction with the nanofocus of the tip resulting in a sub-diffraction limited tip-enhanced PL hotspot. On the other hand, we show that indirect excitation and emission via scattering from the tip significantly increases the recorded PL intensity. This demonstrates that the tip-assisted PL (TAPL) process efficiently guides the generated light to the detector. We apply the TAPL method to map the in-plane dipole orientations of the hBN color centers on the nanoscale. This work promotes the widely available s-SNOM approach to applications in the quantum domain including characterization and optical control.
title Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering-type scanning near-field optical microscope
topic Mesoscale and Nanoscale Physics
Optics
url https://arxiv.org/abs/2501.15216