Generation of narrowband quantum emitters in hBN with optically addressable spins

Fuente: arXiv
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Main Authors: Whitefield, Benjamin, Zeng, Helen Zhi Jie, Liddle-Wesolowski, James, Robertson, Islay O., Ivády, Viktor, Watanabe, Kenji, Taniguchi, Takashi, Toth, Milos, Tetienne, Jean-Philippe, Aharonovich, Igor, Kianinia, Mehran
Format: Preprint
Published: 2025
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author Whitefield, Benjamin
Zeng, Helen Zhi Jie
Liddle-Wesolowski, James
Robertson, Islay O.
Ivády, Viktor
Watanabe, Kenji
Taniguchi, Takashi
Toth, Milos
Tetienne, Jean-Philippe
Aharonovich, Igor
Kianinia, Mehran
author_facet Whitefield, Benjamin
Zeng, Helen Zhi Jie
Liddle-Wesolowski, James
Robertson, Islay O.
Ivády, Viktor
Watanabe, Kenji
Taniguchi, Takashi
Toth, Milos
Tetienne, Jean-Philippe
Aharonovich, Igor
Kianinia, Mehran
contents Electron spins coupled with optical transitions in solids stand out as a promising platform for developing spin-based quantum technologies. Recently, hexagonal boron nitride (hBN) - a layered Van der Waals (vdW) crystal, has emerged as a promising host for optically addressable spin systems. However, to date, on-demand generation of isolated single photon emitters with pre-determined spin transitions has remained elusive. Here, we report on a single step, thermal processing of hBN flakes that produces high density, narrowband, quantum emitters with optically active spin transitions. Remarkably, over 25% of the emitters exhibit a clear signature of an optical spin readout at room temperature, surpassing all previously reported results by an order of magnitude. The generated spin defect complexes exhibit both S = 1 and S = 1/2 transitions, which are explained by charge transfer from strongly to weakly coupled spin pairs. Our work advances the understanding of spin complexes in hBN and paves the way for single spin - photon interfaces in layered vdW materials with applications in quantum sensing and information processing.
format Preprint
id arxiv_https___arxiv_org_abs_2501_15341
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Generation of narrowband quantum emitters in hBN with optically addressable spins
Whitefield, Benjamin
Zeng, Helen Zhi Jie
Liddle-Wesolowski, James
Robertson, Islay O.
Ivády, Viktor
Watanabe, Kenji
Taniguchi, Takashi
Toth, Milos
Tetienne, Jean-Philippe
Aharonovich, Igor
Kianinia, Mehran
Quantum Physics
Electron spins coupled with optical transitions in solids stand out as a promising platform for developing spin-based quantum technologies. Recently, hexagonal boron nitride (hBN) - a layered Van der Waals (vdW) crystal, has emerged as a promising host for optically addressable spin systems. However, to date, on-demand generation of isolated single photon emitters with pre-determined spin transitions has remained elusive. Here, we report on a single step, thermal processing of hBN flakes that produces high density, narrowband, quantum emitters with optically active spin transitions. Remarkably, over 25% of the emitters exhibit a clear signature of an optical spin readout at room temperature, surpassing all previously reported results by an order of magnitude. The generated spin defect complexes exhibit both S = 1 and S = 1/2 transitions, which are explained by charge transfer from strongly to weakly coupled spin pairs. Our work advances the understanding of spin complexes in hBN and paves the way for single spin - photon interfaces in layered vdW materials with applications in quantum sensing and information processing.
title Generation of narrowband quantum emitters in hBN with optically addressable spins
topic Quantum Physics
url https://arxiv.org/abs/2501.15341