Saved in:
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2501.15762 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866910801531502592 |
|---|---|
| author | Zhao, Pengnan Shi, Guoyi Lu, Wentian Yang, Lihuan Tan, Hui Ru Guo, Kaiwei Lai, Jia-Min Yu, Zhonghai Soumyanarayanan, Anjan Yuan, Zhe Wang, Fei Xu, Xiaohong Yang, Hyunsoo |
| author_facet | Zhao, Pengnan Shi, Guoyi Lu, Wentian Yang, Lihuan Tan, Hui Ru Guo, Kaiwei Lai, Jia-Min Yu, Zhonghai Soumyanarayanan, Anjan Yuan, Zhe Wang, Fei Xu, Xiaohong Yang, Hyunsoo |
| contents | Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the practical application of magnon devices demands room temperature operation and low switching power of perpendicular magnetization. Here we demonstrate the low-power manipulation of perpendicular magnetization via magnon torques in SnTe/NiO/CoFeB devices at room temperature. Topological crystalline insulator SnTe exhibits a high spin Hall conductivity of $σ_s \approx 6.1\times 10^4 (\hbar/2e)\cdot (Ω\cdot m)^{-1}$, which facilitates the generation of magnon currents in an antiferromagnetic insulator NiO. The magnon currents traverse the 20-nm-thick NiO layer and subsequently exert magnon torques on the adjacent ferromagnetic layer, leading to magnetization switching. Notably, we achieve a 22-fold reduction in power consumption in SnTe/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples. Our findings establish the low-power perpendicular magnetization manipulation through magnon torques, significantly expanding the range of topological materials with practical applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_15762 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Magnon-mediated perpendicular magnetization switching by topological crystalline insulator SnTe with high spin Hall conductivity Zhao, Pengnan Shi, Guoyi Lu, Wentian Yang, Lihuan Tan, Hui Ru Guo, Kaiwei Lai, Jia-Min Yu, Zhonghai Soumyanarayanan, Anjan Yuan, Zhe Wang, Fei Xu, Xiaohong Yang, Hyunsoo Materials Science Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the practical application of magnon devices demands room temperature operation and low switching power of perpendicular magnetization. Here we demonstrate the low-power manipulation of perpendicular magnetization via magnon torques in SnTe/NiO/CoFeB devices at room temperature. Topological crystalline insulator SnTe exhibits a high spin Hall conductivity of $σ_s \approx 6.1\times 10^4 (\hbar/2e)\cdot (Ω\cdot m)^{-1}$, which facilitates the generation of magnon currents in an antiferromagnetic insulator NiO. The magnon currents traverse the 20-nm-thick NiO layer and subsequently exert magnon torques on the adjacent ferromagnetic layer, leading to magnetization switching. Notably, we achieve a 22-fold reduction in power consumption in SnTe/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples. Our findings establish the low-power perpendicular magnetization manipulation through magnon torques, significantly expanding the range of topological materials with practical applications. |
| title | Magnon-mediated perpendicular magnetization switching by topological crystalline insulator SnTe with high spin Hall conductivity |
| topic | Materials Science |
| url | https://arxiv.org/abs/2501.15762 |