Optimizing electro-optic modulators for interfacing color centers in an integrated silicon carbide platform
Fuente:
arXiv
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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Acceso en línea: | |
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| _version_ | 1866915146902798336 |
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| author | Wang, Ruixuan Li, Jingwei Li, Qing |
| author_facet | Wang, Ruixuan Li, Jingwei Li, Qing |
| contents | Silicon carbide is a promising material platform for hosting various color centers suitable for quantum information processing. Here, we report the design and demonstration of an integrated electro-optic modulator that can directly interface the silicon vacancy centers in the 4H-silicon-carbide-on-insulator platform. Despite a relatively low electro-optic coefficient ($0.22$ pm/V), the optimized silicon carbide modulator is able to work in the 920 nm range with a propagation loss of less than $0.5$ dB/cm, featuring a 3-dB bandwidth around 500 MHz, an extinction ratio of 8-12 dB for an operating peak-to-peak voltage of 10 V, and a footprint of less than $0.1\ \text{mm}^2$. With such modulation performance, our work provides a cost-effective solution for the chip-scale implementation of the electro-optic modulation technology for interfacing color centers in the silicon carbide platform. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_16556 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optimizing electro-optic modulators for interfacing color centers in an integrated silicon carbide platform Wang, Ruixuan Li, Jingwei Li, Qing Optics Applied Physics Silicon carbide is a promising material platform for hosting various color centers suitable for quantum information processing. Here, we report the design and demonstration of an integrated electro-optic modulator that can directly interface the silicon vacancy centers in the 4H-silicon-carbide-on-insulator platform. Despite a relatively low electro-optic coefficient ($0.22$ pm/V), the optimized silicon carbide modulator is able to work in the 920 nm range with a propagation loss of less than $0.5$ dB/cm, featuring a 3-dB bandwidth around 500 MHz, an extinction ratio of 8-12 dB for an operating peak-to-peak voltage of 10 V, and a footprint of less than $0.1\ \text{mm}^2$. With such modulation performance, our work provides a cost-effective solution for the chip-scale implementation of the electro-optic modulation technology for interfacing color centers in the silicon carbide platform. |
| title | Optimizing electro-optic modulators for interfacing color centers in an integrated silicon carbide platform |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2501.16556 |