Anisotropic galvanomagnetic effects in single-crystal Fe(001) films elucidated by a phenomenological theory
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866917904196304896 |
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| author | Chen, Haoran Cheng, Zhen Feng, Yizi Xu, Hongyue Wu, Tong Chen, Chuanhang Chen, Yue Yuan, Zhe Wu, Yizheng |
| author_facet | Chen, Haoran Cheng, Zhen Feng, Yizi Xu, Hongyue Wu, Tong Chen, Chuanhang Chen, Yue Yuan, Zhe Wu, Yizheng |
| contents | Utilizing the phenomenological theory based on crystal symmetry operation, we have established the complete angular dependencies of the galvanomagnetic effects, encompassing both anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE), for the ferromagnetic films with C4v symmetry. These dependencies were experimentally confirmed via comprehensive angular-mapping of AMR and PHE in single-crystal Fe(001) films at room temperature. We demonstrated that the intrinsic magnetization-induced effects are independent of the field strength by carefully separating the field-induced and magnetization-induced galvanomagnetic effects. Our theoretical and experimental findings highlight the absence of in-plane four-fold angular dependence in PHE, a feature prohibited by the Onsager relation in systems with C4 symmetry. This study affirms that the universal angular dependencies of AMR and PHE in single crystals can be accurately predicted by the conventional phenomenological theory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_16791 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Anisotropic galvanomagnetic effects in single-crystal Fe(001) films elucidated by a phenomenological theory Chen, Haoran Cheng, Zhen Feng, Yizi Xu, Hongyue Wu, Tong Chen, Chuanhang Chen, Yue Yuan, Zhe Wu, Yizheng Materials Science Other Condensed Matter Utilizing the phenomenological theory based on crystal symmetry operation, we have established the complete angular dependencies of the galvanomagnetic effects, encompassing both anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE), for the ferromagnetic films with C4v symmetry. These dependencies were experimentally confirmed via comprehensive angular-mapping of AMR and PHE in single-crystal Fe(001) films at room temperature. We demonstrated that the intrinsic magnetization-induced effects are independent of the field strength by carefully separating the field-induced and magnetization-induced galvanomagnetic effects. Our theoretical and experimental findings highlight the absence of in-plane four-fold angular dependence in PHE, a feature prohibited by the Onsager relation in systems with C4 symmetry. This study affirms that the universal angular dependencies of AMR and PHE in single crystals can be accurately predicted by the conventional phenomenological theory. |
| title | Anisotropic galvanomagnetic effects in single-crystal Fe(001) films elucidated by a phenomenological theory |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2501.16791 |