Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908509114728448 |
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| author | Buzzi, Alessandro Papon, Camille Pirro, Matteo Hooybergs, Odiel Raniwala, Hamza Saggio, Valeria Errando-Herranz, Carlos Englund, Dirk |
| author_facet | Buzzi, Alessandro Papon, Camille Pirro, Matteo Hooybergs, Odiel Raniwala, Hamza Saggio, Valeria Errando-Herranz, Carlos Englund, Dirk |
| contents | The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter's optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_17290 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain Buzzi, Alessandro Papon, Camille Pirro, Matteo Hooybergs, Odiel Raniwala, Hamza Saggio, Valeria Errando-Herranz, Carlos Englund, Dirk Optics Applied Physics Quantum Physics The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter's optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform. |
| title | Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain |
| topic | Optics Applied Physics Quantum Physics |
| url | https://arxiv.org/abs/2501.17290 |