High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
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| Format: | Preprint |
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2025
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| _version_ | 1866909588687683584 |
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| author | Su, Haotian Lee, Yuan-Mau Peña, Tara Fultz-Waters, Sydney Kang, Jimin Köroğlu, Çağıl Wahid, Sumaiya Newcomb, Christina J. Song, Young Suh Wong, H. -S. Philip Wang, Shan X. Pop, Eric |
| author_facet | Su, Haotian Lee, Yuan-Mau Peña, Tara Fultz-Waters, Sydney Kang, Jimin Köroğlu, Çağıl Wahid, Sumaiya Newcomb, Christina J. Song, Young Suh Wong, H. -S. Philip Wang, Shan X. Pop, Eric |
| contents | Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of ~180 °C and ~340 °C on SiO${_2}$ and HfO${_2}$ substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance (TBC) of 35 ${\pm}$ 12 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on SiO${_2}$, and 51 ${\pm}$ 14 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on HfO${_2}$. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2501_17367 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors Su, Haotian Lee, Yuan-Mau Peña, Tara Fultz-Waters, Sydney Kang, Jimin Köroğlu, Çağıl Wahid, Sumaiya Newcomb, Christina J. Song, Young Suh Wong, H. -S. Philip Wang, Shan X. Pop, Eric Applied Physics Mesoscale and Nanoscale Physics Materials Science Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of ~180 °C and ~340 °C on SiO${_2}$ and HfO${_2}$ substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance (TBC) of 35 ${\pm}$ 12 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on SiO${_2}$, and 51 ${\pm}$ 14 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on HfO${_2}$. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications. |
| title | High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors |
| topic | Applied Physics Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2501.17367 |