Copertina

The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Huang, Huai-Chin, Chen, Shih-Min, Weisbuch, Claude, Speck, James S., Wu, Yuh-Renn
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Applied Physics Mesoscale and Nanoscale Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs
di: Fornos, C., et al.
Pubblicazione: (2025)

Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
di: Li, Xuefeng, et al.
Pubblicazione: (2025)

Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
di: Huang, H-W S., et al.
Pubblicazione: (2025)

Spectroscopic Signature of Local Alloy Fluctuations in InGaN/GaN Multi-Quantum-Disk Light Emitting Diode Heterostructures and Its Impact on the Optical Performance
di: Chatterjee, Soumyadip, et al.
Pubblicazione: (2024)

Spectral and Small-Signal Electroluminescence Analysis of Carrier Dynamics in Dual-Color InGaN/GaN Light-Emitting Diodes
di: Li, Xuefeng, et al.
Pubblicazione: (2026)

Red Emission from Strain-Relaxed Bulk InGaN Active Region
di: Pan, Zuojian, et al.
Pubblicazione: (2025)

InGaN Nanopixel Arrays on Single Crystal GaN Substrate
di: Anand, Nirmal, et al.
Pubblicazione: (2025)

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
di: Zhou, Jie, et al.
Pubblicazione: (2025)

Analysis of two-terminal perovskite/silicon tandem solar cells with differing texture structure, perovskite carrier lifetime and tunneling junction quality
di: Hsieh, Chun-Hao, et al.
Pubblicazione: (2023)

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-$κ$ oxides
di: Huang, Hsin-Wen, et al.
Pubblicazione: (2025)

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors
di: Chiu, Yun-Pin, et al.
Pubblicazione: (2023)

High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
di: Kumawat, Kishan Lal, et al.
Pubblicazione: (2025)

Frequency-Resolved Forward Capacitance in GaN-based LEDs
di: Li, Yuchen, et al.
Pubblicazione: (2024)

Color‐Tunable SWIR Upconversion Display Based on InGaN Red MicroLEDs
di: Cheng‐Yeu Wu, et al.
Pubblicazione: (2026)

On Apparent Absence of Green Gap in InGaN/GaN Quantum Disks and Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
di: Sadaf, Sharif Md., et al.
Pubblicazione: (2025)

Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
di: Li, Yuyin, et al.
Pubblicazione: (2024)

Effect of Concentration Fluctuations on Material Properties of Disordered Alloys
di: Liang, Han-Pu, et al.
Pubblicazione: (2025)

Hexagonal network of photocurrent enhancement in few-layer graphene/InGaN quantum dot junctions
di: Cheng, Guanghui, et al.
Pubblicazione: (2022)

Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation
di: Saleem, Muhammad Farooq, et al.
Pubblicazione: (2024)

Characterization of the optical response from variant InGaN nanowires emitting within the green spectral gap
di: Esmaeilzadeh, Mohsen, et al.
Pubblicazione: (2025)

Size-Limited Room Temperature Single-Photon Emission from Sidewall-Treated Fractional Dimension InGaN Quantum Dots: Determined by Density-of-States-Corrected Ultrafast Carrier Dynamics and Improved Signal-to-Noise Ratio
di: Saha, Pratim K.
Pubblicazione: (2026)

Impact of Surface Passivation on the Efficiency and High-speed Modulation of III-V GaAs/AlGaAs Nanopillar Array LEDs
di: Jacob, Bejoys, et al.
Pubblicazione: (2025)

Time-Asymmetric Fluctuation Theorem and Efficient Free Energy Estimation
di: Zhong, Adrianne, et al.
Pubblicazione: (2023)

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
di: Koblmüller, G., et al.
Pubblicazione: (2024)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
di: Liu, Yizheng, et al.
Pubblicazione: (2025)

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
di: Sauty, Mylène, et al.
Pubblicazione: (2025)

Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDs
di: Turski, Henryk
Pubblicazione: (2025)

Mechanism of $E'_γ$ Defect Generation in Ionizing-irradiated $a$-SiO$_2$: The Nonradiative Carrier Capture-Structural Relaxation Model
di: Song, Yu, et al.
Pubblicazione: (2024)

GaN-based Resonant Cavity LEDs Fabricated by Photo-Electrochemical Etching and Micro-Transfer Printing
di: Chen, Huanqing, et al.
Pubblicazione: (2025)

Frequency Fluctuations in Nanomechanical Resonators due to Quantum Defects
di: Maksymowych, M. P., et al.
Pubblicazione: (2025)

On the Origin of Carrier Loss in Mg-Doped N-Polar GaN
di: Kamiyama, Masahiro, et al.
Pubblicazione: (2025)

Electroluminescence in n-type GaAs unipolar nanoLEDs
di: Jacob, Bejoys, et al.
Pubblicazione: (2025)

Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates
di: Pant, Nick, et al.
Pubblicazione: (2023)

Randomized Benchmarking with Leakage Errors
di: Chen, Yi-Hsiang, et al.
Pubblicazione: (2025)

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
di: Pan, Z., et al.
Pubblicazione: (2023)

Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects
di: Zuojian Pan, et al.
Pubblicazione: (2024)

Enhanced Light Extraction and Beam Focusing in GaN LEDs Using Hybrid Metasurface-Distributed Bragg Reflector Structures
di: Xu, Hanbo, et al.
Pubblicazione: (2025)

Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN
di: Yazawa, Keisuke, et al.
Pubblicazione: (2024)

Subspace Leakage Error Randomized Benchmarking of Mølmer-Sørensen Gates
di: Sutherland, R. T., et al.
Pubblicazione: (2025)

Role of Sidewall Conditions in the External Quantum Efficiency of InGaN‐Based Micro‐LEDs
di: Jeong‐Hwan Park, et al.
Pubblicazione: (2025)