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Main Authors: Jaman, Azminul, Fratino, Lorenzo, Ahmadi, Majid, Rocco, Rodolfo, Kooi, Bart J., Rozenberg, Marcelo, Banerjee, Tamalika
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2502.00137
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author Jaman, Azminul
Fratino, Lorenzo
Ahmadi, Majid
Rocco, Rodolfo
Kooi, Bart J.
Rozenberg, Marcelo
Banerjee, Tamalika
author_facet Jaman, Azminul
Fratino, Lorenzo
Ahmadi, Majid
Rocco, Rodolfo
Kooi, Bart J.
Rozenberg, Marcelo
Banerjee, Tamalika
contents The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing anisotropic functional properties in LSMO on a twinned LAO substrate and driving it out of thermodynamic equilibrium, we demonstrate two distinct negative differential resistance states in such volatile memristors. These were harnessed to exhibit oscillatory dynamics in LSMO at different frequencies and an artificial neuron with leaky integrate-and-fire dynamics. A material based modelling incorporating bond angle distortions in neighboring perovskites and capturing the inhomogeneity of domain distribution and propagation explains both the NDR regimes. Our findings establish LSMO as an important material for neuromorphic computing hardware.
format Preprint
id arxiv_https___arxiv_org_abs_2502_00137
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electrically induced negative differential resistance states mediated by oxygen octahedra coupling in manganites for neuronaldynamics
Jaman, Azminul
Fratino, Lorenzo
Ahmadi, Majid
Rocco, Rodolfo
Kooi, Bart J.
Rozenberg, Marcelo
Banerjee, Tamalika
Materials Science
Applied Physics
The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing anisotropic functional properties in LSMO on a twinned LAO substrate and driving it out of thermodynamic equilibrium, we demonstrate two distinct negative differential resistance states in such volatile memristors. These were harnessed to exhibit oscillatory dynamics in LSMO at different frequencies and an artificial neuron with leaky integrate-and-fire dynamics. A material based modelling incorporating bond angle distortions in neighboring perovskites and capturing the inhomogeneity of domain distribution and propagation explains both the NDR regimes. Our findings establish LSMO as an important material for neuromorphic computing hardware.
title Electrically induced negative differential resistance states mediated by oxygen octahedra coupling in manganites for neuronaldynamics
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2502.00137