Stress Accommodation in Nanoscale Dolan Bridges Designed for Superconducting Qubits

Fuente: arXiv
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Auteurs principaux: Skinner-Ramos, Sueli, Freeman, Matthew L., Pete, Douglas, Lewis, Rupert M., Eichenfield, Matthew, Harris, C. Thomas
Format: Preprint
Publié: 2025
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author Skinner-Ramos, Sueli
Freeman, Matthew L.
Pete, Douglas
Lewis, Rupert M.
Eichenfield, Matthew
Harris, C. Thomas
author_facet Skinner-Ramos, Sueli
Freeman, Matthew L.
Pete, Douglas
Lewis, Rupert M.
Eichenfield, Matthew
Harris, C. Thomas
contents Josephson junctions are the principal circuit element in numerous superconducting quantum information devices and can be readily integrated into large-scale electronics. However, device integration at the wafer scale necessarily depends on having a reliable, high-fidelity, and high-yield fabrication method for creating Josephson junctions. When creating Al/AlOx based superconducting qubits, the standard Josephson junction fabrication method relies on a sub-micron suspended resist bridge, known as a Dolan bridge, which tends to be particularly fragile and can often times fracture during the resist development process, ultimately resulting in device failure. In this work, we demonstrate a unique Josephson junction lithography mask design that incorporates stress-relief channels. Our simulation results show that the addition of stress-relief channels reduces the lateral stress in the Dolan bridge by more than 70% for all the bridge geometries investigated. In practice, our novel mask design significantly increased the survivability of the bridge during device processing, resulting in 100% yield for over 100 Josephson junctions fabricated.
format Preprint
id arxiv_https___arxiv_org_abs_2502_00255
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Stress Accommodation in Nanoscale Dolan Bridges Designed for Superconducting Qubits
Skinner-Ramos, Sueli
Freeman, Matthew L.
Pete, Douglas
Lewis, Rupert M.
Eichenfield, Matthew
Harris, C. Thomas
Superconductivity
Quantum Physics
Josephson junctions are the principal circuit element in numerous superconducting quantum information devices and can be readily integrated into large-scale electronics. However, device integration at the wafer scale necessarily depends on having a reliable, high-fidelity, and high-yield fabrication method for creating Josephson junctions. When creating Al/AlOx based superconducting qubits, the standard Josephson junction fabrication method relies on a sub-micron suspended resist bridge, known as a Dolan bridge, which tends to be particularly fragile and can often times fracture during the resist development process, ultimately resulting in device failure. In this work, we demonstrate a unique Josephson junction lithography mask design that incorporates stress-relief channels. Our simulation results show that the addition of stress-relief channels reduces the lateral stress in the Dolan bridge by more than 70% for all the bridge geometries investigated. In practice, our novel mask design significantly increased the survivability of the bridge during device processing, resulting in 100% yield for over 100 Josephson junctions fabricated.
title Stress Accommodation in Nanoscale Dolan Bridges Designed for Superconducting Qubits
topic Superconductivity
Quantum Physics
url https://arxiv.org/abs/2502.00255