Modeling Filamentary Conduction in Reset Phase Change Memory Devices
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2025
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| author | Hafiz, Md Samzid Bin Silva, Helena Gokirmak, Ali |
| author_facet | Hafiz, Md Samzid Bin Silva, Helena Gokirmak, Ali |
| contents | We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature dependent electronic transport model with carrier activation energies that vary locally around 0.3 eV and as a function of temperature. We observe the snapback (threshold switching) behavior in the current-voltage (I-V) characteristics at ~50 MV/m electric field with 0.63 $μ$A current for 300 K ambient temperature, where current collapses onto a single molten filament with ~ 2 nm diameter, aligned with the electric field, and the device switches from a high resistance state (108 $Ω$) to a low resistance state (103 $Ω$). Further increase in voltage across the device leads to widening of the molten filament. Snap-back current and electric field are strong functions of ambient temperature, ranging from ~ 0.53 $μ$A at 200 K to ~ 16.93 $μ$A at 800 K and ~ 85 MV/m at 150 K to 45 MV/m at 350 K, respectively. Snap-back electric-field decreases exponentially with increasing device length, converging to ~ 38 MV/m for devices longer than 200 nm. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2502_00866 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Modeling Filamentary Conduction in Reset Phase Change Memory Devices Hafiz, Md Samzid Bin Silva, Helena Gokirmak, Ali Applied Physics We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature dependent electronic transport model with carrier activation energies that vary locally around 0.3 eV and as a function of temperature. We observe the snapback (threshold switching) behavior in the current-voltage (I-V) characteristics at ~50 MV/m electric field with 0.63 $μ$A current for 300 K ambient temperature, where current collapses onto a single molten filament with ~ 2 nm diameter, aligned with the electric field, and the device switches from a high resistance state (108 $Ω$) to a low resistance state (103 $Ω$). Further increase in voltage across the device leads to widening of the molten filament. Snap-back current and electric field are strong functions of ambient temperature, ranging from ~ 0.53 $μ$A at 200 K to ~ 16.93 $μ$A at 800 K and ~ 85 MV/m at 150 K to 45 MV/m at 350 K, respectively. Snap-back electric-field decreases exponentially with increasing device length, converging to ~ 38 MV/m for devices longer than 200 nm. |
| title | Modeling Filamentary Conduction in Reset Phase Change Memory Devices |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2502.00866 |