Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures
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arXiv
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866914196166279168 |
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| author | Kim, Sunghoon London, Paz Yang, Daipeng Hughes, Lillian Ahlers, Jeffrey Meynell, Simon Mitchell, William Mukherjee, Kunal Jayich, Ania C. Bleszynski |
| author_facet | Kim, Sunghoon London, Paz Yang, Daipeng Hughes, Lillian Ahlers, Jeffrey Meynell, Simon Mitchell, William Mukherjee, Kunal Jayich, Ania C. Bleszynski |
| contents | Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation - in number, position, and coherence - in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen $δ$-doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report positioning precision of ~ 4 nm in depth and 46(1) nm laterally in pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average $T_2^{Hahn}$ = 98 $μs$) and 1.8x higher average photoluminescence compared to NV centers randomly positioned in pillars. We achieve a 3x improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_01198 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures Kim, Sunghoon London, Paz Yang, Daipeng Hughes, Lillian Ahlers, Jeffrey Meynell, Simon Mitchell, William Mukherjee, Kunal Jayich, Ania C. Bleszynski Quantum Physics Applied Physics Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation - in number, position, and coherence - in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen $δ$-doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report positioning precision of ~ 4 nm in depth and 46(1) nm laterally in pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average $T_2^{Hahn}$ = 98 $μs$) and 1.8x higher average photoluminescence compared to NV centers randomly positioned in pillars. We achieve a 3x improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors. |
| title | Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures |
| topic | Quantum Physics Applied Physics |
| url | https://arxiv.org/abs/2502.01198 |