Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
Fuente:
arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866915134835785728 |
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| author | Mavropoulis, A. E. Vasileiadis, N. Normand, P. Theodorou, C. Sirakoulis, G. Ch. Kim, S. Dimitrakis, P. |
| author_facet | Mavropoulis, A. E. Vasileiadis, N. Normand, P. Theodorou, C. Sirakoulis, G. Ch. Kim, S. Dimitrakis, P. |
| contents | The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_01346 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Effect of Al2O3 on the operation of SiNX-based MIS RRAMs Mavropoulis, A. E. Vasileiadis, N. Normand, P. Theodorou, C. Sirakoulis, G. Ch. Kim, S. Dimitrakis, P. Applied Physics Materials Science The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied. |
| title | Effect of Al2O3 on the operation of SiNX-based MIS RRAMs |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2502.01346 |