Copertina

Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Mavropoulis, A. E., Vasileiadis, N., Normand, P., Theodorou, C., Sirakoulis, G. Ch., Kim, S., Dimitrakis, P.
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

SiNx RRAMs performance with different stoichiometries
di: Mavropoulis, A. E., et al.
Pubblicazione: (2025)

Effect of SOI substrate on silicon nitride resistance switching using MIS structure
di: Mavropoulis, A, et al.
Pubblicazione: (2025)

Silicon nitride resistance switching MIS cells doped with silicon atoms
di: Mavropoulis, A, et al.
Pubblicazione: (2025)

Effect of Silicon Atom Doping in SiNx Resistive Switching Films
di: Mavropoulis, A, et al.
Pubblicazione: (2025)

Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
di: Vasileiadis, N, et al.
Pubblicazione: (2025)

Breakdown characteristics of SiNx with different stoichiometries for resistive memories
di: Mavropoulis, A. E., et al.
Pubblicazione: (2025)

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
di: Mavropoulis, AE, et al.
Pubblicazione: (2025)

Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
di: Mavropoulis, A. E., et al.
Pubblicazione: (2025)

The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
di: Vasileiadis, Nikolaos, et al.
Pubblicazione: (2025)

Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
di: Vasileiadis, N, et al.
Pubblicazione: (2025)

Analysis of random telegraph noise in resistive memories: The case of unstable filaments
di: Vasileiadis, Nikolaos, et al.
Pubblicazione: (2025)

Memristor Applications: Nanodevices Redefining Technological Landscapes
di: Vasileiadis, Nikolaos, et al.
Pubblicazione: (2025)

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
di: Samara, Georgia, et al.
Pubblicazione: (2025)

Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons
di: Samara, Georgia, et al.
Pubblicazione: (2025)

Silicon Nitride Resistive Memories
di: Alexandros‐Eleftherios Mavropoulis, et al.
Pubblicazione: (2026)

Demonstration of low power and highly uniform 6-bit operation in SiO2-based memristors embedded with Pt nanoparticles
di: Kleitsiotis, G., et al.
Pubblicazione: (2024)

Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure
di: Hu, Tao, et al.
Pubblicazione: (2024)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
di: Abbasi, Haris Naeem, et al.
Pubblicazione: (2024)

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3
di: Ardenghi, A., et al.
Pubblicazione: (2022)

Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
di: Huang, H-W S., et al.
Pubblicazione: (2025)

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
di: Gačević, Ž., et al.
Pubblicazione: (2024)

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma
di: Catherall, David, et al.
Pubblicazione: (2024)

Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs
di: Bhuiyan, A F M Anhar Uddin, et al.
Pubblicazione: (2025)

Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
di: Shin, Seungheon, et al.
Pubblicazione: (2025)

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
di: Mukhopadhyay, Swarnav, et al.
Pubblicazione: (2024)

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
di: Buatip, N., et al.
Pubblicazione: (2024)

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
di: Liu, Yang, et al.
Pubblicazione: (2024)

High-Pressure XRD Study of Ti-3Al-2.5V Titanium Alloy: Intermediate Transition Pressure and Composition Trends in Ti-Al-V Alloys
di: Errandonea, D., et al.
Pubblicazione: (2026)

Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
di: Hu, Tao, et al.
Pubblicazione: (2024)

Low-to-mid Al content ($x\sim$ 0-0.56) Al$_x$In$_{1-x}$N layers deposited on Si(100) by radio-frequency sputtering
di: Blasco, R., et al.
Pubblicazione: (2025)

Ferroelectric Al$_{1-x}$B$_x$N sputtered thin films on n-type Si bottom electrodes
di: Mercer, Ian, et al.
Pubblicazione: (2025)

Effect of annealing on the hot salt corrosion resistance of the fine-grained titanium alpha-alloy Ti-2.5Al-2.6Zr obtained via cold Rotary Swaging
di: Chuvil'deev, V. N., et al.
Pubblicazione: (2024)

A new critical growth parameter and mechanistic model for SiC nanowire synthesis via Si substrate carbonization: the role of H$_2$/CH$_4$ gas flow ratio
di: Koo, Junghyun, et al.
Pubblicazione: (2024)

Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si
di: Smith, Trevor R., et al.
Pubblicazione: (2024)

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$
di: Roy, Saurav, et al.
Pubblicazione: (2024)

Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
di: Daoust, P., et al.
Pubblicazione: (2025)

Threshold Switching in Vertically Aligned MoS${_2}$/SiO${_x}$ Heterostructures based on Silver Ion Migration
di: Lee, Jimin, et al.
Pubblicazione: (2025)

LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities
di: Khan, Saleh Ahmed, et al.
Pubblicazione: (2024)

Heterogeneous integration of high endurance ferroelectric and piezoelectric epitaxial BaTiO$_3$ devices on Si
di: Haque, Asraful, et al.
Pubblicazione: (2024)

Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices
di: Pradhan, Soumen, et al.
Pubblicazione: (2025)