1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866916595183386624 |
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| author | Samara, Georgia Vasileiadis, Nikolaos Mavropoulis, Alexandros Theodorou, Christoforos Papagelis, Konstantinos Dimitrakis, Panagiotis |
| author_facet | Samara, Georgia Vasileiadis, Nikolaos Mavropoulis, Alexandros Theodorou, Christoforos Papagelis, Konstantinos Dimitrakis, Panagiotis |
| contents | Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_01348 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | 1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes Samara, Georgia Vasileiadis, Nikolaos Mavropoulis, Alexandros Theodorou, Christoforos Papagelis, Konstantinos Dimitrakis, Panagiotis Applied Physics Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level. |
| title | 1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2502.01348 |