Resonance Raman Scattering and Anomalous Anti-Stokes Phenomena in CrSBr

Fuente: arXiv
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Autori principali: Sahu, Satyam, Berrezueta-Palacios, Charlotte, Juergensen, Sabrina, Mosina, Kseniia, Sofer, Zdeněk, Velický, Matěj, Kusch, Patryk, Frank, Otakar
Natura: Preprint
Pubblicazione: 2025
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author Sahu, Satyam
Berrezueta-Palacios, Charlotte
Juergensen, Sabrina
Mosina, Kseniia
Sofer, Zdeněk
Velický, Matěj
Kusch, Patryk
Frank, Otakar
author_facet Sahu, Satyam
Berrezueta-Palacios, Charlotte
Juergensen, Sabrina
Mosina, Kseniia
Sofer, Zdeněk
Velický, Matěj
Kusch, Patryk
Frank, Otakar
contents CrSBr, a van der Waals material, stands out as an air-stable magnetic semiconductor with appealing intrinsic properties such as crystalline anisotropy, quasi-1D electronic characteristics, layer-dependent antiferromagnetism, and non-linear optical effects. In this study, we investigate the differences between the absorption and emission spectra, focusing on the origin of the emission peak near 1.7 eV observed in the photoluminescence spectrum of CrSBr. Our findings are corroborated by excitation-dependent Raman experiments. Additionally, we explore the anti-Stokes Raman spectra and observe an anomalously high anti-Stokes to Stokes intensity ratio of up to 0.8, which varies significantly with excitation laser power and crystallographic orientation relative to the polarization of the scattered light. This ratio is notably higher than that observed in graphene ($\approx$ 0.1) and MoS$_2$ ($\approx$ 0.4), highlighting the unique vibrational and electronic interactions in CrSBr. Lastly, we examine stimulated Raman scattering and calculate the Raman gain in CrSBr, which attains a value of 1 $\times$ 10$^{8}$ cm/GW, nearly four orders of magnitude higher than that of previously studied three-dimensional systems.
format Preprint
id arxiv_https___arxiv_org_abs_2502_01794
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Resonance Raman Scattering and Anomalous Anti-Stokes Phenomena in CrSBr
Sahu, Satyam
Berrezueta-Palacios, Charlotte
Juergensen, Sabrina
Mosina, Kseniia
Sofer, Zdeněk
Velický, Matěj
Kusch, Patryk
Frank, Otakar
Mesoscale and Nanoscale Physics
CrSBr, a van der Waals material, stands out as an air-stable magnetic semiconductor with appealing intrinsic properties such as crystalline anisotropy, quasi-1D electronic characteristics, layer-dependent antiferromagnetism, and non-linear optical effects. In this study, we investigate the differences between the absorption and emission spectra, focusing on the origin of the emission peak near 1.7 eV observed in the photoluminescence spectrum of CrSBr. Our findings are corroborated by excitation-dependent Raman experiments. Additionally, we explore the anti-Stokes Raman spectra and observe an anomalously high anti-Stokes to Stokes intensity ratio of up to 0.8, which varies significantly with excitation laser power and crystallographic orientation relative to the polarization of the scattered light. This ratio is notably higher than that observed in graphene ($\approx$ 0.1) and MoS$_2$ ($\approx$ 0.4), highlighting the unique vibrational and electronic interactions in CrSBr. Lastly, we examine stimulated Raman scattering and calculate the Raman gain in CrSBr, which attains a value of 1 $\times$ 10$^{8}$ cm/GW, nearly four orders of magnitude higher than that of previously studied three-dimensional systems.
title Resonance Raman Scattering and Anomalous Anti-Stokes Phenomena in CrSBr
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2502.01794