Characterization of CMOS sensor using X-ray irradiation

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Vijay, Anusree, Behera, Prafulla Kumar, Chembakan, Theertha, Dash, Ganapati
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866915137222344704
author Vijay, Anusree
Behera, Prafulla Kumar
Chembakan, Theertha
Dash, Ganapati
author_facet Vijay, Anusree
Behera, Prafulla Kumar
Chembakan, Theertha
Dash, Ganapati
contents Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge readout architecture. This new class of monolithic pixel detectors is found to have exceptional radiation tolerance, superior hit rates, higher resolution and precise timing resolution, making them ideally suited for experiments at the LHC. To optimize the performance of these sensors before their deployment in actual detectors, comprehensive electrical characterization has been conducted. This study also includes comparative DAC analyses among sensors of varying thicknesses, providing crucial insights for performance enhancement. For the further understanding of the effect of radiation, the sensors are being exposed to different fluence using high intensity X-ray source.
format Preprint
id arxiv_https___arxiv_org_abs_2502_02435
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Characterization of CMOS sensor using X-ray irradiation
Vijay, Anusree
Behera, Prafulla Kumar
Chembakan, Theertha
Dash, Ganapati
Instrumentation and Detectors
High Energy Physics - Experiment
Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge readout architecture. This new class of monolithic pixel detectors is found to have exceptional radiation tolerance, superior hit rates, higher resolution and precise timing resolution, making them ideally suited for experiments at the LHC. To optimize the performance of these sensors before their deployment in actual detectors, comprehensive electrical characterization has been conducted. This study also includes comparative DAC analyses among sensors of varying thicknesses, providing crucial insights for performance enhancement. For the further understanding of the effect of radiation, the sensors are being exposed to different fluence using high intensity X-ray source.
title Characterization of CMOS sensor using X-ray irradiation
topic Instrumentation and Detectors
High Energy Physics - Experiment
url https://arxiv.org/abs/2502.02435