Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS$_2$ Growth
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915139451617280 |
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| author | Zhang, Yunhao Wang, Jingwei Chen, Yumo Wu, Xian Tan, Junyang Liu, Jiarong Nong, Huiyu He, Liqiong Wu, Qinke Zhou, Guangmin Zou, Xiaolong Liu, Bilu |
| author_facet | Zhang, Yunhao Wang, Jingwei Chen, Yumo Wu, Xian Tan, Junyang Liu, Jiarong Nong, Huiyu He, Liqiong Wu, Qinke Zhou, Guangmin Zou, Xiaolong Liu, Bilu |
| contents | Preparation of high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the precondition for realizing their applications. However, the synthesized 2D TMDCs (e.g., MoS$_2$) crystals suffer from low quality due to the massive defects formed during the growth. Here, we report the single-atom sulfur (S1) as a highly reactive sulfur species to grow ultrahigh-quality monolayer MoS$_2$. Derived from battery waste, the sulfurized polyacrylonitrile (SPAN) is found to be exclusive and efficient in releasing S1. The monolayer MoS$_2$ prepared by SPAN exhibits an ultralow defect density of $~7\times 10^{12}$ cm$^{-2}$ and the narrowest photoluminescence (PL) emission peak with full-width at half-maximum of ~47.11 meV at room temperature. Moreover, the statistical resonance Raman and low-temperature PL results further verify the significantly lower defect density and higher optical quality of SPAN-grown MoS$_2$ than the conventional S-powder-grown samples. This work provides an effective approach for preparing ultrahigh-quality 2D single crystals, facilitating their industrial applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_02926 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS$_2$ Growth Zhang, Yunhao Wang, Jingwei Chen, Yumo Wu, Xian Tan, Junyang Liu, Jiarong Nong, Huiyu He, Liqiong Wu, Qinke Zhou, Guangmin Zou, Xiaolong Liu, Bilu Materials Science Applied Physics Preparation of high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the precondition for realizing their applications. However, the synthesized 2D TMDCs (e.g., MoS$_2$) crystals suffer from low quality due to the massive defects formed during the growth. Here, we report the single-atom sulfur (S1) as a highly reactive sulfur species to grow ultrahigh-quality monolayer MoS$_2$. Derived from battery waste, the sulfurized polyacrylonitrile (SPAN) is found to be exclusive and efficient in releasing S1. The monolayer MoS$_2$ prepared by SPAN exhibits an ultralow defect density of $~7\times 10^{12}$ cm$^{-2}$ and the narrowest photoluminescence (PL) emission peak with full-width at half-maximum of ~47.11 meV at room temperature. Moreover, the statistical resonance Raman and low-temperature PL results further verify the significantly lower defect density and higher optical quality of SPAN-grown MoS$_2$ than the conventional S-powder-grown samples. This work provides an effective approach for preparing ultrahigh-quality 2D single crystals, facilitating their industrial applications. |
| title | Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS$_2$ Growth |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2502.02926 |