Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Vasileiadis, N, Mavropoulis, A, Karafyllidis, I, Sirakoulis, G Ch, Dimitrakis, P
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866917913693257728
author Vasileiadis, N
Mavropoulis, A
Karafyllidis, I
Sirakoulis, G Ch
Dimitrakis, P
author_facet Vasileiadis, N
Mavropoulis, A
Karafyllidis, I
Sirakoulis, G Ch
Dimitrakis, P
contents In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed.
format Preprint
id arxiv_https___arxiv_org_abs_2502_02993
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
Vasileiadis, N
Mavropoulis, A
Karafyllidis, I
Sirakoulis, G Ch
Dimitrakis, P
Applied Physics
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed.
title Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
topic Applied Physics
url https://arxiv.org/abs/2502.02993