Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917913693257728 |
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| author | Vasileiadis, N Mavropoulis, A Karafyllidis, I Sirakoulis, G Ch Dimitrakis, P |
| author_facet | Vasileiadis, N Mavropoulis, A Karafyllidis, I Sirakoulis, G Ch Dimitrakis, P |
| contents | In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_02993 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic Vasileiadis, N Mavropoulis, A Karafyllidis, I Sirakoulis, G Ch Dimitrakis, P Applied Physics In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed. |
| title | Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2502.02993 |