Optical Properties of Aluminium-Doped Zinc Oxide Thin Films Synthesized via AACVD Using Nitrogen as a Carrier Gas
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866912221019242496 |
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| author | Imoni-Ogbe, Kingsley Osiele, Onyekachukwu Mike Akpoveta, Vincent Umudi, Queen Ugbolu, Bright Enajite, Oscar |
| author_facet | Imoni-Ogbe, Kingsley Osiele, Onyekachukwu Mike Akpoveta, Vincent Umudi, Queen Ugbolu, Bright Enajite, Oscar |
| contents | The study uses AACVD technology with nitrogen carrier gas to make AZO thin films through which it determines structural, optical, and morphological changes from 0 to 20 percent aluminum doping. The depositions took place at 400 degrees Celsius on soda-lime glass before the samples received an annealing process at 450 degrees Celsius inside a nitrogen chamber. The X-ray diffraction analysis identified superior crystalline structure in films processed with nitrogen gas through their strong signals at the 220, 311 and 222 peaks. The increasing levels of aluminum doping decreased the crystallite dimensions and elevated grain boundary concentrations because of intensified crystal tension and defective structural formation. The profilometry assessment determined film thickness increased mildly from 102 nanometers in undoped ZnO to 115 nanometers in 20 percent aluminum-doped ZnO. The presence of nitrogen annealing in the films led to increased absorbance while the strongest absorbance peaks occurred when the material contained 5 percent dopants. The bandgap energy expanded through the change from undoped ZnO with 3.21 electron volts to 3.33 electron volts at 20 percent aluminum doping which matched Burstein-Moss effect results. The optoelectronic devices gain enhanced optical characteristics from the doping levels exceeding 15 percent. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_03058 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optical Properties of Aluminium-Doped Zinc Oxide Thin Films Synthesized via AACVD Using Nitrogen as a Carrier Gas Imoni-Ogbe, Kingsley Osiele, Onyekachukwu Mike Akpoveta, Vincent Umudi, Queen Ugbolu, Bright Enajite, Oscar Materials Science Applied Physics The study uses AACVD technology with nitrogen carrier gas to make AZO thin films through which it determines structural, optical, and morphological changes from 0 to 20 percent aluminum doping. The depositions took place at 400 degrees Celsius on soda-lime glass before the samples received an annealing process at 450 degrees Celsius inside a nitrogen chamber. The X-ray diffraction analysis identified superior crystalline structure in films processed with nitrogen gas through their strong signals at the 220, 311 and 222 peaks. The increasing levels of aluminum doping decreased the crystallite dimensions and elevated grain boundary concentrations because of intensified crystal tension and defective structural formation. The profilometry assessment determined film thickness increased mildly from 102 nanometers in undoped ZnO to 115 nanometers in 20 percent aluminum-doped ZnO. The presence of nitrogen annealing in the films led to increased absorbance while the strongest absorbance peaks occurred when the material contained 5 percent dopants. The bandgap energy expanded through the change from undoped ZnO with 3.21 electron volts to 3.33 electron volts at 20 percent aluminum doping which matched Burstein-Moss effect results. The optoelectronic devices gain enhanced optical characteristics from the doping levels exceeding 15 percent. |
| title | Optical Properties of Aluminium-Doped Zinc Oxide Thin Films Synthesized via AACVD Using Nitrogen as a Carrier Gas |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2502.03058 |