Cover Image

Heteroepitaxial growth of highly anisotropic $Sb_{2}Se_{3}$ films on GaAs

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Xiao, Kelly, Tara, Virat, Reddy, Pooja D., Meyer, Jarod E., Skipper, Alec M., Chen, Rui, Nordin, Leland J., Majumdar, Arka, Mukherjee, Kunal
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
by: Xiao, Kelly, et al.
Published: (2024)

Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films
by: Reddy, Pooja D., et al.
Published: (2023)

Mid-infrared LEDs based on lattice-mismatched hybrid IV-VI/III-V heterojunctions
by: Meyer, Jarod E., et al.
Published: (2025)

Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
by: Haidet, Brian B., et al.
Published: (2022)

Epitaxial Growth of Anisotropic SnSe on GaAs(001) via Step-Edge Orientation Control
by: Reddy, Pooja D., et al.
Published: (2026)

Engineering PbSnSe Heterostructures for Luminescence Out to 8 µm at Room Temperature
by: Jarod E. Meyer, et al.
Published: (2024)

Complex wavefront engineering via decoupled space-time modulation
by: Tara, Virat, et al.
Published: (2026)

Low-loss multilevel operation using lossy PCM-integrated silicon photonics
by: Chen, Rui, et al.
Published: (2024)

Low-power 7-bit hybrid volatile/ nonvolatile tuning of ring resonators
by: Dutta, Jayita, et al.
Published: (2024)

Electronic properties of metamorphic GaSbBi films on GaAs
by: Hilska, Joonas, et al.
Published: (2024)

Compact broadband thermal absorbers based on plasmonic fractal metasurfaces
by: Audhkhasi, Romil, et al.
Published: (2025)

NEO-PGA: Nonvolatile electro-optically programmable gate array
by: Chen, Rui, et al.
Published: (2025)

Measurement of complex scattering matrix in a nano-cavity array for boundary scattering tomography
by: Tang, Andrew, et al.
Published: (2026)

All-Dielectric Metasurface with a Two-Dimensional Locally Flat Photonic Band
by: Choi, Minho, et al.
Published: (2025)

Electrically reconfigurable nonvolatile transmissive metasurface in visible
by: Tara, Virat, et al.
Published: (2025)

Electrically reconfigurable nonvolatile flatband absorbers in the mid-infrared with wide spectral tuning range
by: Audhkhasi, Romil, et al.
Published: (2025)

Electrically Reconfigurable Nonvolatile Transmissive Metasurface in Visible
by: Virat Tara, et al.
Published: (2026)

Photoluminescence Properties of Type‐II GaSb/GaAs Quantum Rings
by: Shumithira Gandan, et al.
Published: (2025)

Monte Carlo simulation of epitaxial growth of GaInAsSb films
by: Jheison Alejandro Morales
Published: (2014)

Epitaxial growth and transport properties of a metallic altermagnet CrSb on a GaAs (001) substrate
by: Aota, Seiji, et al.
Published: (2025)

Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
by: V. M. Aquino
Published: (2007)

Critical thickness of Ge / GaAs(001) epitaxial films
by: A. G. Rodríguez
Published: (2003)

Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
by: Bae, Jai Kwan, et al.
Published: (2022)

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers
by: Cheng, Kun, et al.
Published: (2023)

Adsorption-Controlled Epitaxy and Twin Control of $γ$-GaSe on GaAs (111)B
by: Eickhoff, Joshua, et al.
Published: (2026)

Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates
by: M. Meléndez Lira
Published: (1999)

Increased endurance of nonvolatile photonics enabled by nanostructured phase-change materials
by: Dutta, Jayita, et al.
Published: (2026)

Increased Endurance of Nonvolatile Photonics Enabled by Nanostructured Phase‐Change Materials
by: Jayita Dutta, et al.
Published: (2026)

Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots
by: D.J. Sánchez - Trujillo
Published: (2017)

Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
by: Jeong, Hyowon W., et al.
Published: (2026)

Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
by: Jarosz, Dawid, et al.
Published: (2024)

Novel 3D Reciprocal Space Visualization of Strain Relaxation in InSb on GaAs Substrates
by: Blaikie, T., et al.
Published: (2024)

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates
by: Jena, Jagannath, et al.
Published: (2025)

Spin transport analysis for a spin pseudovalve-type L_l/SC/L_r trilayer for L = {FeCr, Fe, Co, NiFe, Ni} and SC = {GaSb, InSb, InAs, GaAs, ZnSe}
by: Zúñiga, Julián A., et al.
Published: (2026)

GaAs//CuInGaSe‐Based Multijunction Solar Cells with 30% Efficiency Under Low Concentrated Sunlight
by: Kikuo Makita, et al.
Published: (2024)

MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice
by: B. Sarikavak
Published: (2008)

Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B
by: Hilse, Maria, et al.
Published: (2024)

Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A
by: Khaled, Mohamed Ali, et al.
Published: (2024)

Optimizing GaAs/AlGaAs Growth on GaAs (111)B for Enhanced Nonlinear Efficiency in Quantum Optical Metasurfaces
by: Blaikie, T., et al.
Published: (2025)

Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
by: Yu, Mingyu, et al.
Published: (2024)