Cover Image

The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Vasileiadis, Nikolaos, Mavropoulis, Alexandros, Theodorou, Christoforos, Dimitrakis, Panagiotis
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
by: Samara, Georgia, et al.
Published: (2025)

Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons
by: Samara, Georgia, et al.
Published: (2025)

Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
by: Mavropoulis, A. E., et al.
Published: (2025)

Analysis of random telegraph noise in resistive memories: The case of unstable filaments
by: Vasileiadis, Nikolaos, et al.
Published: (2025)

Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
by: Mavropoulis, A. E., et al.
Published: (2025)

Effect of Silicon Atom Doping in SiNx Resistive Switching Films
by: Mavropoulis, A, et al.
Published: (2025)

Silicon nitride resistance switching MIS cells doped with silicon atoms
by: Mavropoulis, A, et al.
Published: (2025)

Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
by: Vasileiadis, N, et al.
Published: (2025)

SiNx RRAMs performance with different stoichiometries
by: Mavropoulis, A. E., et al.
Published: (2025)

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
by: Mavropoulis, AE, et al.
Published: (2025)

Breakdown characteristics of SiNx with different stoichiometries for resistive memories
by: Mavropoulis, A. E., et al.
Published: (2025)

Silicon Nitride Resistive Memories
by: Alexandros‐Eleftherios Mavropoulis, et al.
Published: (2026)

Memristor Applications: Nanodevices Redefining Technological Landscapes
by: Vasileiadis, Nikolaos, et al.
Published: (2025)

Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
by: Lahkar, Simanta, et al.
Published: (2025)

Effect of SOI substrate on silicon nitride resistance switching using MIS structure
by: Mavropoulis, A, et al.
Published: (2025)

Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
by: Vasileiadis, N, et al.
Published: (2025)

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study
by: Roy, Arijit, et al.
Published: (2022)

Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon
by: Ghosh, Saptarsi, et al.
Published: (2024)

Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform
by: Fabrizi, Federico, et al.
Published: (2024)

Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
by: Pappas, David P., et al.
Published: (2024)

Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
by: Athena, Fabia F., et al.
Published: (2025)

Radio Frequency Field-Induced Enhancement of Detection Sensitivity in Silicon Nanowire Sensors
by: Liu, Ang, et al.
Published: (2026)

Stress-Dependent Optical Extinction in LPCVD Silicon Nitride Measured by Nanomechanical Photothermal Sensing
by: Kanellopulos, Kostas, et al.
Published: (2024)

Frequency-resolved Raman Thermometry Analysis via a Multi-layer Heat Transfer Model for Bulk and Low-dimensional Materials
by: Yu, Taocheng, et al.
Published: (2024)

Color Centers in Hexagonal Boron Nitride
by: Kim, Suk Hyun, et al.
Published: (2024)

Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride
by: Nedić, Sergei, et al.
Published: (2024)

Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 μm Wavelength Detection
by: Jung, Hyemin, et al.
Published: (2024)

High-temperature Phonon Coherence and Tunneling Effect in Semiconductor Superlattices
by: Geng, Zhi-Ming, et al.
Published: (2024)

Multipacting mitigation by atomic layer deposition: the case study of Titanium Nitride
by: Kalboussi, Yasmine, et al.
Published: (2024)

Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
by: Völkel, Lukas, et al.
Published: (2025)

Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor
by: Dey, Koushik, et al.
Published: (2024)

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode
by: Samanta, Kartik, et al.
Published: (2023)

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices
by: Zhang, Di, et al.
Published: (2024)

Monolithic Selenium/Silicon Tandem Solar Cells
by: Nielsen, Rasmus, et al.
Published: (2023)

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
by: Leblanc, Chloe, et al.
Published: (2025)

Influence of Point Defects on Laser-Induced Excitation in Silicon
by: Otobe, Tomohito, et al.
Published: (2024)

On the Photoluminescence Theory in Nanocrystalline Silicon: A New Improvement
by: Ramírez-Porras, Arturo
Published: (2025)

Tailoring the Opto-Electronic Properties of Oxide-Metal-Oxide Transparent Electrode Using Cu Seed Layer
by: Chandrakar, Nikky
Published: (2023)

Antiferromagnetic Tunnel Junctions for Spintronics
by: Shao, Ding-Fu, et al.
Published: (2023)

Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN
by: Yang, Guangcanlan, et al.
Published: (2024)