Photoluminescence Features of Few-Layer Hexagonal $α$-In$_2$Se$_3$
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Eliseyev, I. A. Veretennikov, A. I. Galimov, A. I. Kotova, L. V. Osochenko, G. V. Gasnikova, K. A. Kirilenko, D. A. Yagovkina, M. A. Salii, Yu. A. Davydov, V. Yu. Alekseev, P. A. Rakhlin, M. V. |
| author_facet | Eliseyev, I. A. Veretennikov, A. I. Galimov, A. I. Kotova, L. V. Osochenko, G. V. Gasnikova, K. A. Kirilenko, D. A. Yagovkina, M. A. Salii, Yu. A. Davydov, V. Yu. Alekseev, P. A. Rakhlin, M. V. |
| contents | Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer In$_2$Se$_3$ flakes with thicknesses ranging from 7 to 100 monolayers. To explore the photoluminescence features and correlate them with changes in crystal symmetry and surface potential, we employed a combination of techniques, including temperature-dependent micro-photoluminescence, time-resolved photoluminescence, Raman spectroscopy, atomic force microscopy, and Kelvin probe force microscopy. X-ray diffraction and Raman spectroscopy confirmed that the samples studied possess the $α$-polytype structure. The micro-photoluminescence spectrum consists of two bands, A and B, with band B almost completely disappearing at room temperature. Temperature-dependent photoluminescence and time-resolved measurements helped us to elucidate the nature of the observed bands. We find that peak A is associated with emission from interband transitions in In$_2$Se$_3$, while peak B is attributed to defect-related emission. Additionally, the photoluminescence decay times of In$_2$Se$_3$ flakes with varying thicknesses were determined. No significant changes were observed in the decay components as the thickness increased from 7 to 100 monolayers, suggesting that there are no qualitative changes in the band structure. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2502_03981 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Photoluminescence Features of Few-Layer Hexagonal $α$-In$_2$Se$_3$ Eliseyev, I. A. Veretennikov, A. I. Galimov, A. I. Kotova, L. V. Osochenko, G. V. Gasnikova, K. A. Kirilenko, D. A. Yagovkina, M. A. Salii, Yu. A. Davydov, V. Yu. Alekseev, P. A. Rakhlin, M. V. Materials Science Mesoscale and Nanoscale Physics Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer In$_2$Se$_3$ flakes with thicknesses ranging from 7 to 100 monolayers. To explore the photoluminescence features and correlate them with changes in crystal symmetry and surface potential, we employed a combination of techniques, including temperature-dependent micro-photoluminescence, time-resolved photoluminescence, Raman spectroscopy, atomic force microscopy, and Kelvin probe force microscopy. X-ray diffraction and Raman spectroscopy confirmed that the samples studied possess the $α$-polytype structure. The micro-photoluminescence spectrum consists of two bands, A and B, with band B almost completely disappearing at room temperature. Temperature-dependent photoluminescence and time-resolved measurements helped us to elucidate the nature of the observed bands. We find that peak A is associated with emission from interband transitions in In$_2$Se$_3$, while peak B is attributed to defect-related emission. Additionally, the photoluminescence decay times of In$_2$Se$_3$ flakes with varying thicknesses were determined. No significant changes were observed in the decay components as the thickness increased from 7 to 100 monolayers, suggesting that there are no qualitative changes in the band structure. |
| title | Photoluminescence Features of Few-Layer Hexagonal $α$-In$_2$Se$_3$ |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2502.03981 |