Enhanced chemical vapour deposition of monolayer MoS2 films via a clean promoter
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866917213086154752 |
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| author | Wang, Lulin Sun, Yue Kannan, Kaushik Gannon, Lee Guo, Xuyun Rafferty, Aran Gaff, Karl Mullani, Navaj B. Weng, Haizhong Zhou, Yangbo Nicolosi, Valeria Guinness, Cormac Mc Zhang, Hongzhou |
| author_facet | Wang, Lulin Sun, Yue Kannan, Kaushik Gannon, Lee Guo, Xuyun Rafferty, Aran Gaff, Karl Mullani, Navaj B. Weng, Haizhong Zhou, Yangbo Nicolosi, Valeria Guinness, Cormac Mc Zhang, Hongzhou |
| contents | Two-dimensional (2D) transition metal dichalcogenides (TMDCs), exemplified by molybdenum disulfide (MoS2), have shown exceptional potential for data-centred, energy-efficient electronic applications due to their unique electrical, optoelectronic, and mechanical properties. However, challenges such as the controllable synthesis of high-quality, large-area 2D MoS2 films and the mitigation of contamination during growth remain significant barriers to their integration into advanced technologies. Here, we developed a novel contamination-free growth promoter, enabling the clean and scalable synthesis of high quality 2D MoS2 with desirable grain structures via chemical vapour deposition (CVD). By optimising the reactant concentration and S/Mo ratio, we achieved promoter-dominated enhanced growth with enhanced quality, as evidenced by the increased MoS2 flake size and coverage, alongside a strong PL A exciton peak at 1.84 eV, matching that of the mechanically exfoliated sample. This approach facilitates the clean and site-specific growth of high-quality 2D MoS2, establishing a robust pathway for the practical implementation of 2D MoS2 in next-generation electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_04505 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhanced chemical vapour deposition of monolayer MoS2 films via a clean promoter Wang, Lulin Sun, Yue Kannan, Kaushik Gannon, Lee Guo, Xuyun Rafferty, Aran Gaff, Karl Mullani, Navaj B. Weng, Haizhong Zhou, Yangbo Nicolosi, Valeria Guinness, Cormac Mc Zhang, Hongzhou Materials Science Mesoscale and Nanoscale Physics Two-dimensional (2D) transition metal dichalcogenides (TMDCs), exemplified by molybdenum disulfide (MoS2), have shown exceptional potential for data-centred, energy-efficient electronic applications due to their unique electrical, optoelectronic, and mechanical properties. However, challenges such as the controllable synthesis of high-quality, large-area 2D MoS2 films and the mitigation of contamination during growth remain significant barriers to their integration into advanced technologies. Here, we developed a novel contamination-free growth promoter, enabling the clean and scalable synthesis of high quality 2D MoS2 with desirable grain structures via chemical vapour deposition (CVD). By optimising the reactant concentration and S/Mo ratio, we achieved promoter-dominated enhanced growth with enhanced quality, as evidenced by the increased MoS2 flake size and coverage, alongside a strong PL A exciton peak at 1.84 eV, matching that of the mechanically exfoliated sample. This approach facilitates the clean and site-specific growth of high-quality 2D MoS2, establishing a robust pathway for the practical implementation of 2D MoS2 in next-generation electronic devices. |
| title | Enhanced chemical vapour deposition of monolayer MoS2 films via a clean promoter |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2502.04505 |